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| samsung semiconductor, inc. product selection guide memory and storage january 2009
samsung semiconductor, inc. samsung offers the industrys broadest memory portfolio and has maintained its leadership in memory technology for 16 straight years. its dram, fash and sram products are found in computersfrom ultra-mobile portables to powerful servers and in a wide range of handheld devices such as smartphones and mp3 players. samsung also delivers the industrys widest line of storage products. these inlcude optical and hard disk drives as well as fash storage, such as the all-fash solid state drive and a range of embedded and removable fash storage products. www.samsung.com/semi/us mobile/wireless notebook pcs desktop pcs/workstations servers networking/ communications consumer electronics markets dram sram flash asic logic tft/lcd odd/hdd samsung product offerings storage fusion mcp sram flash dram dram www.samsung.com/semi/dram ? ddr3 sdram ? ddr2 sdram ? ddr ? sdram ? mobile sdram ? rdram ? graphics ddr sdram ? dram ordering information ? onedram?: see fusion pages 4-14 multi-chip package www.samsung.com/semi/mcp ? nand/dram ? onenand/dram ? flex-onenand/dram ? onenand/dram/onedram ? movinand/nand/dram ? nor/utram ? nor/dram ? onedram/onenand/nand pages 26-27 fusion memor y fusion memor y www.samsung.com/semi/fusion ? onenand? ? flex-onenand? ? movinand? ? onedram? hamanufacturers repsr ? flash solid state drives optical disk drives www.samsungodd.com ? external dvd ? internal dvd ? internal combo ? internal cd page 28 storage pages 29-33 sram www.samsung.com/semi/sram ? utram ? asynchronous sram ? ntram ? late-write r-r sram ? ddr / ii / ii+ sram ? qdr / ii / ii+ sram ? synchronous sram ordering information pages 20 -25 flash www.samsung.com/semi/flash ? slc flash ? mlc flash ? sd and microsd cards ? flash product ordering information ? solid state drive: see storage ? onenand?: see fusion ? movinand?: see fusion ? flex-onenand?: see fusion pages 15-19 solid state drives www.samsungssd.com ? flash solid state drives hard disk drives www.samsung.com/hdd ? hard disk drives optical disk drives www.samsungodd.com ? external dvd ? internal dvd ? internal combo ? internal cd 4 january 2009 ddr3 sdram registered modules density organization part number composition compliance speed (mbps) banks 1gb 128mx72 m393b2873dz1-c(f7/f8/h9) 1gb (128m x8)*9 rohs 800/1066/1333 1 2gb 256mx72 m393b5673dz1-c(f7/f8/h9) 1gb (128m x8)*18 rohs 800/1066/1333 2 2gb 256mx72 m393b5670dz1-c(f7/f8/h9) 1gb (256m x4)*18 rohs 800/1066/1333 1 4gb 512mx72 m393b5173dz1-c(f7/f8) 1gb (128m x8)*36 rohs 800/1066 4 4gb 512mx72 m393b5170dz1-c(f7/f8/h9) 1gb (256m x4)*36 rohs 800/1066/1333 2 8gb 1gx72 m393b1g70dj1-c(f7/f8) 2gb (512m x4)*36 rohs 800/1066 4 1gb 128mx72 m393b2873eh1-c(f7/f8/h9) 1gb (128m x8)*9 rohs & halogen free 800/1066/1333 1 2gb 256mx72 m393b5673eh1-c(f7/f8/h9) 1gb (128m x8)*18 rohs & halogen free 800/1066/1333 2 2gb 256mx72 m393b5670eh1-c(f7/f8/h9) 1gb (256m x8)*18 rohs & halogen free 800/1066/1333 1 4gb 512mx72 m393b5173eh1-c(f7/f8) 1gb (128m x8)*36 rohs & halogen free 800/1066 4 4gb 512mx72 m393b5170eh1-c(f7/f8/h9) 1gb (256m x4)*36 rohs & halogen free 800/1066/1333 2 8gb 1gx72 m393b1g70em1-c(f7/f8) 2gb (512m x4)*36 rohs & halogen free 800/1066 4 8gb 1gx72 m393b1k70bh1-c(f7/f8/h9) 2gb (512m x4)*36 rohs & halogen free 800/1066/1333 2 16gb 2gx72 m393b2k70bm1-c(f7/f8) 4gb (1024m x4)*36 rohs & halogen free 800/1066 4 1gb 128mx64 m471b2874dz1-c(f7/f8/h9) 1gb (64m x16)*8 rohs 800/1066/1333 2 2gb 256mx64 m471b5673dz1-c(f7/f8/h9) 1gb (128m x8)*16 rohs 800/1066/1333 2 1gb 128mx64 m471b2873eh1-c(f8/h9) 1gb (128m x8)*8 rohs & halogen free 1066/1333 1 1gb 128mx64 m471b2874eh1-c(f8/h9) 1gb (64m x16)*8 rohs & halogen free 1066/1333 2 2gb 256mx64 m471b5673eh1-c(f8/h9) 1gb (128m x8)*16 rohs & halogen free 1066/1333 2 4gb 512mx64 m471b5273bh1-c(f8/h9) 2gb (256m x8)*16 rohs & halogen free 1066/1333 2 notes: f7= ddr3-800 (6-6-6) f8 = ddr3-1066 (7-7-7) h9 = ddr3-1333 (9-9-9) voltage = 1.5v ddr3 sdram unbuffered modules density organization part number composition compliance speed (mbps) module ranks 1gb 128mx64 m378b2873dz1-c(f8/h9) 1gb (128m x8)*8 rohs 1066/1333 1 2gb 256mx64 m378b5673dz1-c(f8/h9) 1gb (128m x8)*16 rohs 1066/1333 2 1gb 128mx64 m378b2873eh1-c(f8/h9) 1gb (128m x8)*8 rohs & halogen free 1066/1333 1 2gb 256mx64 m378b5673eh1-c(f8/h9) 1gb (128m x8)*16 rohs & halogen free 1066/1333 2 4gb 512mx64 m378b5273bh1-c(f8/h9) 2gb (256m x8)*16 rohs & halogen free 1066/1333 2 ddr3 sdram unbuffered modules (ecc) density organization part number composition compliance speed (mbps) module ranks 1gb 128mx72 m391b2873dz1-c(f8/h9) 1gb (128m x8)*9 rohs 1066/1333 1 2gb 256mx72 m391b5673dz1-c(f8/h9) 1gb (128m x8)*18 rohs 1066/1333 2 1gb 128mx72 m391b2873eh1-c(f8/h9) 1gb (128m x8)*9 rohs & halogen free 1066/1333 1 2gb 256mx72 m391b5673eh1-c(f8/h9) 1gb (128m x8)*18 rohs & halogen free 1066/1333 2 4gb 512mx72 m391b5273bh1-c(f8/h9) 2gb (256m x8)*18 rohs & halogen free 1066/1333 2 www.samsung.com/semi/dram ddr3 sdram 5 january 2009 ddr3 sdram components density organization part number # pins - package compliance speed (mbps) package dimensions 1gb 256m x4 k4b1g0446d-hc(f7/f8/h9) 82 ball -fbga rohs & halogen free 800/1066/1333 9x11mm 1gb 128m x8 k4b1g0846d-hc(f7/f8/h9) 82 ball -fbga rohs & halogen free 800/1066/1333 9x11mm 1gb 64m x16 k4b1g1646d-hc(f7/f8/h9) 100 ball -fbga rohs & halogen free 800/1066/1333 9x13.3mm 1gb 256m x4 k4b1g0446e-hc(f7/f8/h9) 78 ball -fbga rohs & halogen free 800/1066/1333 7.5x11mm 1gb 128m x8 k4b1g0846e-hc(f7/f8/h9) 78 ball -fbga rohs & halogen free 800/1066/1333 7.5x11mm 1gb 64m x16 k4b1g1646e-hc(f7/f8/h9) 96 ball -fbga rohs & halogen free 800/1066/1333 7.5x13.3mm 2gb 512m x4 k4b2g0446b-hc(f7/f8/h9) 78 ball -fbga rohs & halogen free 800/1066/1333 9x11.5mm 2gb 256m x8 k4b2g0846b-hc(f7/f8/h9) 78 ball -fbga rohs & halogen free 800/1066/1333 9x11.5mm 2gb 128m x16 k4b2g1646b-hc(f7/f8/h9) 96 ball -fbga rohs & halogen free 800/1066/1333 9x13.3mm notes: f7= ddr3-800 (6-6-6) f8 = ddr3-1066 (7-7-7) h9 = ddr3-1333 (9-9-9) voltage = 1.5v ddr2 sdram registered modules module parity density organization part number composition compliance speed (mbps) register rank production 512mb 64mx72 m393t6553gza-c(e6/f7) (64m x8)*9 lead free 667/800 y 1 now m393t6553gz3-c(cc/d5) (64m x8)*9 lead free 400/533 n 1 now 1gb 128mx72 m393t2950gza-c(e6/f7) (128m x4)*18 lead free 667/800 y 1 now m393t2950gz3-c(cc/d5) (128m x4)*18 lead free 400/533 n 1 now m393t2953gza-c(e6/f7) (64m x8)*18 lead free 667/800 y 2 now m393t2953gz3-c(cc/d5) (64m x8)*18 lead free 400/533 n 2 now m393t2863qza-c(e6/f7) (128m x8)*9 lead free 667/800 y 1 now m393t2863eha-c(e6/f7/e7) (128m x8)*9 lead free & halogen free 667/800 y 1 jan`09 2gb 256mx72 m393t5750gza-c(e6/f7) (128m x4)*36 lead free 667/800 y 2 now m393t5750gz3-c(cc/d5) (128m x4)*36 lead free 400/533 n 2 now m393t5660qza-c(e6/f7/e7) (256m x4)*18 lead free 667/800 y 1 now m393t5660eha-c(e6/f7/e7) (256m x4)*18 lead free & halogen free 667/800 y 1 jan`09 m393t5663qza-c(e6/f7/e7) (128m x8)*18 lead free 667/800 y 2 now m393t5663eha-c(e6/f7/e7) (128m x8)*18 lead free & halogen free 667/800 y 2 jan`09 4gb 512mx72 m393t5160qza-c(e6/f7/e7) (256m x4)*36 lead free 667/800 y 2 now m393t5160eha-c(e6/f7/e7) (256m x4)*36 lead free & halogen free 667/800 y 2 jan`09 8gb 1gx72 m393t1g60qja-c(d5/e6) ddp (512m x4)*36 lead free 533/667 y 4 now m393t1g60ema-c(d5/e6) ddp (512m x4)*36 lead free & halogen free 533/667 y 4 jan`09 m393t1k66aza-c(e6/f7) st. (1g x4)*18 lead free 667/800 y 2 now n otes: cc=pc2-3200 (ddr2-400 @ cl=3) e6=pc2-5300 (ddr2-667 @ cl=5) f7=pc2-6400 (ddr2-800 @ cl=6) e7=pc2-6400 (ddr2-800 @ cl=5) d5=pc2-4200 (ddr2-533 @ cl=4) voltage = 1.8v module height = 1.2" www.samsung.com/semi/dram ddr3 & ddr2 sdram dram 6 january 2009 www.samsung.com/semi/dram ddr2 sdram ddr2 sdram vlp registered modules module parity density organization part number composition compliance speed (mbps) register rank production 512mb 64mx72 m392t6553gza-c(e6/f7) (64m x8)*9 lead free 667/800 y 1 now 1gb 128mx72 m392t2953gza-c(e6/f7) (64m x8)*18 lead free 667/800 y 2 now m392t2950gza-c(e6/f7) (128m x4)*18 lead free 667/800 y 1 now m392t2863qza-c(e6/f7) (128m x8)*9 lead free 667/800 y 1 now m392t2863eha-c(e6/f7) (128m x8)*9 lead free & halogen free 667/800 y 1 feb '09 2gb 256mx72 m392t5660qza-c(e6/f7) (256m x4)*18 lead free 667/800 y 1 now m392t5660eha-c(e6/f7) (256m x4)*18 lead free & halogen free 667/800 y 1 feb '09 m392t5663qza-c(e6/f7) (128m x8)*18 lead free 667/800 y 2 now m392t5663eha-c(e6/f7) (128m x8)*18 lead free & halogen free 667/800 y 2 mar '09 4gb 512mx72 m392t5160qja-c(e6/f7) ddp (512m x4)*18 lead free 667/800 y 2 now m392t5160ema-c(e6/f7) ddp (512m x4)*18 lead free & halogen free 667/800 y 2 mar '09 8gb 1gx72 m392t1g60eeh-c(d5/e6) qdp (1g x4)*18 lead free & halogen free 533/667 y 4 q2`09 ddr2 sdram fully buffered modules module density organization part number composition compliance speed (mbps) voltage rank production 512mb 64mx72 m395t6553gz4-ce6/f7/e7(50/60) (64m x8)*9 lead free 667/800 1.8v 1 now 1gb 128mx72 m395t2953gz4-ce6/f7/e7(50/60) (64m x8)*18 lead free 667/800 1.8v 2 now m395t2863qz4-ce6/f7/e7(60/80/90) (128m x8)*9 lead free 667/800 1.8v 1 now m395t2863eh4-ce6/f7/e7(60/80/90) (128m x8)*9 lead free & halogen free 667/800 1.8v 1 jan`09 m395t2863qz4-ye680 (128m x8)*9 lead free 667 1.55v 1 now m395t2863eh4-ye6/f7(80) (128m x8)*9 lead free & halogen free 667/800 1.55v 1 mar`09 2gb 256mx72 m395t5750gz4-ce6/f7/e7(50/60) (128m x4)*36 lead free 667/800 1.8v 2 now m395t5663qz4-ce6/f7/e7(60/80/90) (128m x8)*18 lead free 667/800 1.8v 2 now m395t5663eh4-c(e6/f7/e7)(60/80/90) (128m x8)*18 lead free & halogen free 667/800 1.8v 2 jan`09 m395t5663qz4-ye680 (128m x8)*18 lead free 667 1.55v 2 now m395t5663eh4-ye6/f7(80) (128m x8)*18 lead free & halogen free 667/800 1.55v 2 feb '09 4gb 512mx72 m395t5160qz4-ce6/f7/e7(60/80/90) (256m x4)*36 lead free 667/800 1.8v 2 now m395t5160eh4-c(e6/f7/e7)(60/80/90) (256m x4)*36 lead free & halogen free 667/800 1.8v 2 feb '09 m395t5160qz4-ye680 (256m x4)*36 lead free 667 1.55v 2 now m395t5160eh4-ye6/f7(80) (256m x4)*36 lead free & halogen free 667/800 1.55v 2 feb '09 m395t5163qz4-ce6/f7/e7(80) (128m x8)*36 lead free 667/800 1.8v 4 now m395t5163eh4-ce6/f7/e7(80) (128m x8)*36 lead free & halogen free 667/800 1.8v 4 mar`09 m395t5163qz4-ye680 (128m x8)*36 lead free 667 1.55v 4 now m395t5163eh4-ye680 (128m x8)*36 lead free & halogen free 667 1.55v 4 mar`09 m395t5263az4-ce6/f7(60/80) (256m x8)*18 lead free 667/800 1.8v 2 now m395t5263az4-ye680 (256m x8)*18 lead free 667 1.55v 2 now 8gb 1gx72 m395t1g60qj4-ce6/f7(80) ddp (512m x4)*36 lead free 667/800 1.8v 4 now m395t1g60em4-ce6/f7(80) ddp (512m x4)*36 lead free & halogen free 667/800 1.8v 4 mar`09 m395t1g60qj4-ye680 ddp (512m x4)*36 lead free 667 1.55v 4 now m395t1g60em4-ye680 ddp (512m x4)*36 lead free & halogen free 667 1.55v 4 mar`09 m395t1k66az4-ce6/f7(60/80) st. (1g x4)*18 lead free 667/800 1.8v 2 now m395t1k66az4-ye680 st. (1g x4)*18 lead free 667 1.55v 2 now n otes: c: amb voltage = 1.5v c: dram voltage = 1.8v y*: amb voltage = 1.5v (available only with c e6) y*: dram voltage = 1.55v (available only with c e6) 50: intel c1 amb 60: id t d1 amb 80 : id t l4 amb 90: montage d1 amb 800 s peed option would be limited along with amb type. module height = 1.2" 7 january 2009 www.samsung.com/semi/dram ddr2 sdram dram ddr2 sdram unbuffered modules module density organization part number composition compliance speed (mbps) rank production 512mb 64mx64 m378t6553gzs-c(e6/f7/e7) (64m x8)*8 lead free 667/800 1 now m378t6464qz3-c(e6/f7/e7) (64m x16)*4 lead free 667/800 1 now 1gb 128mx64 m378t2953gz3-c(e6/f7/e7) (64m x8)*16 lead free 667/800 2 now m378t2863qzs-c(e6/f7/e7) (128m x8)*8 lead free 667/800 1 now m378t2863ehs-c(e6/f7/e7) (128m x8)*8 lead free & halogen free 667/800 1 now 2gb 256mx64 m378t5663qz3-c(e6/f7/e7) (128m x8)*16 lead free 667/800 2 now m378t5663eh3-c(e6/f7/e7) (128m x8)*16 lead free & halogen free 667/800 2 now 4gb 512mx64 m378t5263az3-c(e6/f7) (256m x8)*16 lead free 667/800 2 now n otes: e6=pc2-5300 (ddr2-667 @ cl=5) e7=pc2-6400 (ddr2-800 @ cl=5) f7=pc2-6400 (ddr2-800 @ cl=6) voltage = 1.8v module height =1.2" ddr2 sdram unbuffered modules (ecc) module density organization part number composition compliance speed (mbps) rank production 512mb 64mx72 m391t6553gz3-c(e6/f7/e7) (64m x8)*9 lead free 667/800 1 now 1gb 128mx72 m391t2863qz3-c(e6/f7/e7) (128m x8)*9 lead free 667/800 1 now m391t2863eh3-c(e6/f7/e7) (128m x8)*9 lead free & halogen free 667/800 1 jan '09 2gb 256mx64 m391t5663qz3-c(e6/f7/e7) (128m x8)*18 lead free 667/800 2 now m391t5663eh3-c(e6/f7/e7) (128m x8)*18 lead free & halogen free 667/800 2 jan '09 4gb 512mx64 m391t5263az3-c(e6/f7) (256m x8)*18 lead free 667/800 2 now n otes: e6=pc2-5300 (ddr2-667 @ cl=5) e7=pc2-6400 (ddr2-800 @ cl=5) f7=pc2-6400 (ddr2-800 @ cl=6) voltage = 1.8v module height =1.2" ddr2 sdram sodimm modules module density organization part number composition compliance speed (mbps) rank production 512mb 64mx64 m470t6554gz3-c(e6/f7/e7) (32m x16)*8 lead free 667/800 2 now m470t6464qz3-c(e6/f7/e7) (64m x16)*4 lead free 667/800 1 now 1gb 128mx64 m470t2953gz3-c(e6/f7/e7) (64m x8)*16 lead free 667/800 2 now m470t2864qz3-c(e6/f7/e7) (64m x16)*8 lead free 667/800 2 now m470t2864eh3-c(e6/f7/e7) (64m x16)*8 lead free & halogen free 667/800 2 now 2gb 256mx64 m470t5663qz3-c(e6/f7/e7) (128m x8)*8 lead free 667/800 2 now m470t5663eh3-c(e6/f7/e7) (128m x8)*8 lead free & halogen free 667/800 2 now 4gb 512mx64 m470t5267az3-c(e6/f7) st.(512m x8)*8 lead free 667/800 2 now n otes: e6=pc2-5300 (ddr2-667 @ cl=5) e7=pc2-6400 (ddr2-800 @ cl=5) f7=pc2-6400 (ddr2-800 @ cl=6) voltage = 1.8v module height =1.2" 8 january 2009 ddr sdram sodimm modules module density organization part number composition compliance speed (mbps) 512mb 64mx64 m470l6524fl0-cb300 (32m x16)*8 lead-free 333 1gb 128mx64 m470l2923f60-cb300 (64m x8)*16 lead-free 333 n otes: b0 = ddr266 (133mhz @ cl=2.5) cc = ddr400 (200mhz @ cl=3) b3 = ddr333 (166mhz @ cl=2.5) a2 = ddr266 (133mhz @ cl=2) ddr sdram 1u registered modules module density organization part number composition compliance speed (mbps) 512mb 64mx72 m312l6523fh3-ccc/b0 (64m x8)*9 lead-free 333/400 1gb 128mx72 m312l2920fls-cb0 (128m x4)*18 lead-free 333/400 m312l2923fh3-ccc/b0 (128m x8)*9 lead-free 333/400 m312l2920fh3-cb3 (128m x4)*18 lead-free 333/400 2gb 256mx72 m312l5720fh3-cb3 (128m x4)*36 lead-free 333/400 n otes: b0 = ddr266 (133mhz @ cl=2.5) a2 = ddr266 (133mhz @ cl=2) b3 = ddr333 (166mhz @ cl=2.5) cc = ddr400 (200mhz @ cl=3) t ype: 184-pin www.samsung.com/semi/dram ddr2 & ddr sdram ddr2 sdram components density organization part number # pins-package dimensions package speed (mbps) production 256mb 16mx16 k4t56163qi-zc(e6/f7/e7) 84-fbga 9x13mm lead free 667/800 now 512mb 128m x4 k4t51043qg-hc(e6/f7/e7) 60-fbga 10x11mm lead free & halogen free 667/800 now 64m x8 k4t51083qg-hc(e6/f7/e7) 60-fbga 10x11mm lead free & halogen free 667/800 now 32m x16 k4t51163qg-hc(e6/f7/e7/f8) 84-fbga 11x13mm lead free & halogen free 667/800/1066 now 1gb 256m x4 k4t1g044qq-hc(e6/f7/e7) 68-fbga 11x18mm lead free & halogen free 667/800 now k4t1g044qe-hc(e6/f7/e7) 68-fbga 11x18mm lead free & halogen free 667/800 jan'09 128m x8 k4t1g084qq-hc(e6/f7/e7) 68-fbga 11x18mm lead free & halogen free 667/800 now k4t1g084qe-hc(e6/f7/e7) 68-fbga 11x18mm lead free & halogen free 667/800 now 64m x16 k4t1g164qq-hc(e6/f7/e7) 84-fbga 11x18mm lead free & halogen free 667/800 now k4t1g164qe-hc(e6/f7/e7/f8) 84-fbga 11x18mm lead free & halogen free 667/800/1066 jan'09 2gb 512mx4 k4t2g044qa-hc(e6/f7/e7) 68-fbga 11x18mm lead free & halogen free 667/800 now 256mx8 k4t2g084qa-hc(e6/f7/e7) 68-fbga 11x18mm lead free & halogen free 667/800 now n otes: e6=ddr2-667 (5-5-5) f7=ddr2-800 (6-6-6) e7=ddr2-800 (5-5-5) f8=ddr2-1066 (7-7-7) voltage = 1.8v ddr sdram unbuffered modules module density organization part number composition compliance speed (mbps) 512mb 64mx64 m368l6523fls-ccc/b3 (64m x8)*8 lead-free & halogen free 333/400 1gb 128mx64 m368l2923fln-ccc/b3 (64m x8)*16 lead-free & halogen free 333/400 n otes: b0 = ddr266 (133mhz @ cl=2.5) a2 = ddr266 (133mhz @ cl=2) b3 = ddr333 (166mhz @ cl=2.5) cc = ddr400 (200mhz @ cl=3) package: 66 tsop lead-free and halogen-free voltage: 2.5v 9 january 2009 sdram components density organization part number # pins - package speed (mbps) refresh remarks 64mb 8mx8 k4s640832n-uc(75)000 54-tsop 133 4k k-die changing to n-die 4mx16 k4s641632n-uc(l)(75/60)000 54-tsop 133/143/166 4k k-die changing to n-die 128mb 16mx8 k4s280832k-uc(l)(75)000 54-tsop 133 4k i-die changing to k-die 8mx16 k4s281632k-uc(l)(75/60)000 54-tsop 133/166 4k i-die changing to k-die 256mb 64mx4 k4s560432j-uc(l)(75)000 54-tsop 133 8k h-die changing to j-die 32mx8 k4s560832j-uc(l)(75)000 54-tsop 133 8k h-die changing to j-die 16mx16 k4s561632j-uc(l)(75/60)000 54-tsop 133/166 8k h-die changing to j-die 512mb 128mx4 k4s510432d-uc(l)(75)000 54-tsop 133 8k 64mx8 k4s510832d-uc(l)(75)000 54-tsop 133 8k 32mx16 k4s511632d-uc(l)(75)000 54-tsop 133 8k n otes: l = commercial t emp., low power for industrial temperature, check with ss i marketing banks: 4 all products are lead free voltage: 3.3v s peed: pc133 (133mhz cl=3/pc100 cl2) www.samsung.com/semi/dram ddr, sdram & rdram rdram components density organization part number speed (mbps) # pins - package refresh 288m x18 k4r881869i-dc(m8/t9) 800/1066 92-fbga 16k/32ms n otes: voltage: 2.5 v all products are lead free dram ddr sdram components density organization part number # pins - package speed (mbps) notes 256mb 64mx4 k4h560438j-lcb3/b0 66-tsop 266/333 halogen -free 32mx8 k4h560838j-lccc/b3 66-tsop 333/400 halogen -free 16mx16 k4h561638j-lccc/b3 66-tsop 333/400 halogen -free 512mb 128mx4 k4h510438f-lcb3/b0 66-tsop 266/333 halogen -free k4h510438f-hccc/b3 60-fbga 333/400 halogen -free 64mx8 k4h510838f-lccc/b3 66-tsop 333/400 halogen -free k4h510838f-hccc/b3 60-fbga 333/400 halogen -free 32mx16 k4h511638f-lccc/b3 66-tsop 333/400 halogen -free 128mb 8mx16 k4h281638l-lccc/cd 66-tsop 400/500 halogen -free n otes: b0 = ddr266 (133mhz @ cl=2.5) a2 = ddr266 (133mhz @ cl=2) b3 = ddr333 (166mhz @ cl=2.5) cc = ddr400 (200mhz @ cl=3) 10 january 2009 graphics dram components type density organization part number # pins - package vdd/vddq speed bin (mhz) effective speed (mbps) status gddr5 512mb 16mx32 k4g52324fg 170-fbga 1.5/1.5v 800/900/1000 3200/3600/4000 1gb 32mx32 k4g10324fe 170-fbga 1.5/1.5v 900/1000/1250 3600/4000/5000 cs in 1q'09 gddr3 1gb 32mx32 k4j10324qd 136-fbga 1.8v/1.8v 700/800/900 k4j10324qd 136-fbga 1.85v/1.85v 1000 k4j10324qe 136-fbga 1.8v/1.8v 700/800/1000/1200/1300 cs in q2'09 512mb 16mx32 k4j52324qh 136-fbga 1.8/1.8v 700/800 k4j52324qh 136-fbga 1.9/1.9v 1000 k4j52324qh 136-fbga 2.05/2.05v 1200 k4j52324qh 136-fbga 2.05/2.05v 1300 k4j52324qi 136-fbga 1.8/1.8v 700/800 cs in q3'09 k4j52324qi 136-fbga 1.9/1.9v 1000 cs in q3'09 k4j52324qi 136-fbga 2.05/2.05v 1200 cs in q3'09 gddr3 1gb 64mx16 k4w1g1646d 100 fbga 1.5/1.5v 667 k4w1g1646d 100 fbga 1.8v/1.8v 800/900 k4w1g1646e 100 fbga 1.5v/1.5v 800/900/1000 cs in q1'09 gddr2 1gb 64mx16 k4n1g164qq 84-fbga 1.8/1.8v 400/500 k4n1g164qe 84-fbga 1.8/1.8v 400/500 512mb 32mx16 k4n51163qg 84-fbga 1.8/1.8v 400/500 k4n51163qz 84-fbga 1.8/1.8v 400/500 gddr1 128mb 4mx32 k4d263238k 144-fbga 2.5/2.5v 200/250 k4d263238k 100-tqfp 2.5/2.5v 200/250 8mx16 k4d261638k 66-tsopii 2.5/2.5v 200/250 n otes: (1) package: lead free or halogen free (2) architecture: 4 banks or 8 banks (3) speeds (clock cycle - speed bin): 04: 0.4ns(5.0gbps) 05: 0.5ns(4gbps) 5c: 0.555(3.6gbps) 06: 0.625(3.2gbps) 07: 0.71ns (2.8gbps) 08: 0.83ns (2.4gbps) 09: 0.90ns (2.2gbps) 1a: 1ns (2gbps) 11: 1.1ns (1.8gbps) 12: 1.25ns (1.6gbps) 14: 1.429ns (1.4gbps) 16: 1.667ns (1.2gbps) 20: 2.0ns (1gbps) 22: 2.2ns (0.9gbps) 25: 2.5ns (0.8gbps) 2a: 2.86ns (0.7gbps) 33: 3.3ns (0.6gbps 40: 4.0ns (0.5gbps) 50: 5.0ns (0.4gbps) www.samsung.com/semi/dram graphics dram 11 january 2009 www.samsung.com/semi/dram mobile sdram dram mobile sdram components type density organization part number # pins-package refresh power mmsdram 512mb 32m x16 k4m51163pe-(1)(2)(3)(4) 54-fbga 8k 1.8v k4m51163pg-(1)(2)(3)(4) 54-fbga 8k 1.8v mmsdddr 512mb 32m x16 k4x51163pe-(1)(2)(3)(4) 60-fbga 8k 1.8v k4x51163pg-(1)(2)(3)(4) 60-fbga 8k 1.8v mmsdram 512mb 16m x32 k4m51323pe-(1)(2)(3)(4) 54-fbga 8k 1.8v k4m51323pg-(1)(2)(3)(4) 90-fbga 8k 1.8v mmsdddr 512mb 16m x32 k4x51323pe-(1)(2)(3)(4) 54-fbga 8k 1.8v k4x51323pg-(1)(2)(3)(4) 90-fbga 8k 1.8v mmsdram 256mb 16m x16 k4m56163pi-(1)(2)(3)(4) 54-fbga 8k 1.8v mmsdddr 256mb 16m x16 k4x56163pi-(1)(2)(3)(4) 60-fbga 8k 1.8v mmsdram 256mb 8m x32 k4m56323pi-(1)(2)(3)(4) 90-fbga 8k 1.8v mmsdddr 256mb 8m x32 k4x56323pi-(1)(2)(3)(4) 90-fbga 8k 1.8v mmsdram 128mb 8m x16 k4m28163pn-(1)(2)(3)(4) 54-fbga 4k 1.8v 64mb 4m x16 k4m641633k-(1)(2)(3)(4) 54-fbga 4k 3.0v k4m64163lk-(1)(2)(3)(4) 54-fbga 4k 2.5v k4m64163pk-(1)(2)(3)(4) 54-fbga 4k 1.8v mmsdddr 1gb 64m x16 k4x1g153pe-(1)(2)(3)(4) 60-fbga 8k 1.8v k4x1g163pc-(1)(2)(3)(4) 60-fbga 8k 1.8v k4x1g163pq-(1)(2)(3)(4) 60-fbga 8k 1.8v 32m x32 k4x1g323pc-(1)(2)(3)(4) 90-fbga 8k 1.8v k4x1g323pc-(1)(2)(3)(4) 152-fbga 8k 1.8v k4x1g323pd-(1)(2)(3)(4) 90-fbga 8k 1.8v k4x1g323pq-(1)(2)(3)(4) 152-fbga 8k 1.8v 2gb 64m x32 k4x2g303pd-(1)(2)(3)(4) 8k 1.8v notes: (1) package: mobile sdram 1 : p op 2 : 90-fbga(ddp) 3 : 90-fbga(ddp,lf) 4 : 96-fbga 5 : 96-fbga(lf) 6 : mcp(lf,hf) 9 : 90-fbga(lf, osp) a : fbga(lf, tdp) b : 54-c s p(lf,hf) d : 90-fbga_l(lf,hf) e : fbga(lf,mcp) f : 90-fbga_ s g : lga(lf) h : 90-fbga_ s (lf,hf)j : wbga k : 60-c s p(lf,hf,osp) l : 90-fbga_ ss d(lf,hf) m : fbga(mcp) n : 54-c s p(lf,hf,osp) p : 54-c s p(lf,ddp) q : i sm r : 54-fbga s : 90-fbga_l t : tsop2-400 v : wbga(lf) y : 54-c sp(ddp) (2) t emp & power: c: commercial (-25 ~ 70c), normal l: commercial, low, i- tcsr f: commercial, low, i- tcs r & pasr & ds e : e xtended (-25~85c), normal n: e xtended, low, i-tcsr g: e xtended, low, i-tcs r & pasr & ds i: industrial (-40~85c), normal p: industrial, low h: industrial, low, i- tcs r & pasr & ds (3)-(4) speed: mobile-sdram 60: 166mhz, cl 3 75: 133mhz, cl 3 80: 125mhz, cl 3 1h: 105mhz, cl 2 1l: 105mhz, cl 3 15: 66mhz, cl 2 & 3 mobile-ddr c3: 133mhz, cl 3 c2: 100mhz, cl 3 c0: 66mhz, cl 3 ? it will be applied from each different generation by density. (halogen free: 128mb:14th, 256mb:13th, 512mb:8th,1gb:5th generation) mobile ddr sdram 1 : mcp 2 : 90-fbga(ddp) 3 : 90-fbga(lf,ddp,hf) 4 : 96-fbga 5 : 96-fbga(lf,hf) 6 : fbga(p o p,lf,hf) 7 : 90-fbga 8 : 90-fbga(lf,hf) 9 : 110-fbga(lf,hf) a : 168-fbga(lf,hf,ddp) f : 60-fbga(lf,hf) g : 60-lga(lf) k : 104-fbga(lf,hf) l : wbga(0.8mm) m : 152-fbga(p o p,hf,lf) n : 168-fbga(lf,p o p,hf) p : 60-fbga(lf,ddp,hf) q : i sm r : 102-fbga(hf,lf) s : pop(ddp) ? it will be applied from each different generation by density. (halogen free: 128mb:14th, 256mb:13th, 512mb:8th,1gb:5th generation) mobile ddr sdram pea 1 : p op mono 6 : p op mono (lf,hf) 7 : 90-fbga 8 : 90-fbga(lf) a : fbga(lf, tdp) f : 60-fbga(lf) h : i sm (10x10mm,1-side) k : 72-fbga(lf) l : 60-fbga m : p op-s ac105(lf,ddp) q : i sm s : pop(ddp) x : p o p(lf,ddp,hf) ? it will be applied from each different generation by density. (halogen free: 128mb:14th, 256mb:13th, 512mb:8th,1gb:5th generation) 12 january 2009 1. memory (k) 2. dram: 4 3. dram type b: ddr3 sdram d: gddr sdram g: gddr5 sdram h: ddr sdram j: gddr3 sdram m: mobile sdram n: gddr2 sdram s: sdram t: ddr sdram u: gddr4 sdram v: mobile ddr sdram power efficient address w: gddr3 sdram x: mobile ddr sdram y: xdr dram z: value added dram 4. density 10: 1g, 8k/32ms 16: 16m, 4k/64ms 26: 128m, 4k/32ms 28: 128m, 4k/64ms 32: 32m, 2k/32ms 50: 512m, 32k/16ms 51: 512m, 8k/64ms 52: 512m, 8k/32ms 54: 256m, 16k/16ms 55: 256m, 4k/32ms 56: 256m, 8k/64ms 62: 64m, 2k/16ms 64: 64m, 4k/64ms 68: 768m, 8k/64ms 1g: 1g, 8k/64ms 2g: 2g, 8k/64ms 4g: 4g, 8k/64ms 5. bit organization 02: x2 04: x4 06: x4 stack (flexframe) 07: x8 stack (flexframe) 08: x8 15: x16 (2cs) 16: x16 26: x4 stack (jedec standard) 27: x8 stack (jedec standard) 30: x32 (2cs, 2cke) 31: x32 (2cs) 32: x32 6. # of internal banks 2: 2 banks 3: 4 banks 4: 8 banks 5: 16 banks 7. interface ( vdd, vddq) 2: lvttl, 3.3v, 3.3v 4: lvttl, 2.5v, 2.5v 5: sstl-2 1.8v, 1.8v 6: sstl-15 1.5v, 1.5v 8: sstl-2, 2.5v, 2.5v a: sstl, 2.5v, 1.8v f: pod-15 (1.5v,1.5v) h: sstl_2 dll, 3.3v, 2.5v m: lvttl, 1.8v, 1.5v n: lvttl, 1.5v, 1.5v p: lvttl, 1.8v, 1.8v q: sstl-2 1.8v, 1.8v r: sstl-2, 2.8v, 2.8v u: drsl, 1.8v, 1.2v 8. revision a: 2nd generation b: 3rd generation c: 4th generation d: 5th generation e: 6th generation f: 7th generation g: 8th generation h: 9th generation i: 10th generation j: 11th generation k: 12th generation m: 1st generation n: 14th generation q: 17th generation 9. package type ddr sdram l: tsop ii (lead-free & halogen-free) h: fbga (lead-free & halogen-free) f: fbga for 64mb ddr (lead-free & halogen- free) 6: stsop ii (lead-free & halogen-free) t: tsop ii n: stsop ii g: fbga u: tsop ii (lead-free) v: stsop ii (lead-free) z: fbga (lead-free) ddr2 sdram z: fbga (lead-free) j: fbga ddp (lead-free) q: fbga qdp (lead-free) h: fbga (lead-free & halogen-free) m: fbga ddp (lead-free & halogen-free) e: fbga qdp (lead-free & halogen-free) t: fbga dsp (lead-free & halogen-free, thin) ddr3 sdram z: fbga (lead-free) h: fbga (halogen-free & lead-free) graphics memory q: tqfp u: tqfp (lead free) g: 84/144 fbga v: 144 fbga (lead free) z: 84 fbga(lead free) t: tsop l: tsop (lead free) a: 136 fbga b: 136 fbga(lead free) h: fbga(hologen free & lead free) e: 100 fbga(hologen free & lead free) sdram l tsop ii (lead-free & halogen-free) n: stsop ii t: tsop ii u: tsop ii (lead-free) v: stsop ii (lead-free) component dram ordering information 1 2 3 4 5 6 7 8 9 10 11 k 4 t xx xx x x x x x xx samsung memory dram dram type density bit organization speed temp & power package type revision interface (vdd, vddq) number of internal banks www.samsung.com/semi/dram dram ordering information 13 january 2009 xdr dram j: boc(lf) p: boc mobile dram leaded / lead free g/a: 52balls fbga mono r/b: 54balls fbga mono x /z: 54balls boc mono j /v: 60(72)balls fbga mono 0.5pitch l /f: 60balls fbga mono 0.8pitch s/d: 90balls fbga monolithic (11mm x 13mm) f/h: smaller 90balls fbga mono y/p: 54balls csp ddp m/e: 90balls fbga ddp 10. temp & power - common (temp, power) c: commercial, normal (0c C 95c) & normal power c: (mobile only) commercial (-25 ~ 70c), normal power j: commercial, medium l: commercial, low (0c C 95c) & low power l: (mobile only) commercial, low, i-tcsr f: commercial, low, i-tcsr & pasr & ds e: extended (-25~85c), normal n: extended, low, i-tcsr g: extended, low, i-tcsr & pasr & ds i: industrial, normal (-40c C 85c) & normal power p: industrial, low (-40c C 85c) & low power h: industrial, low, i-tcsr & pasr & ds 11. speed (wafer/chip biz/bgd: 00) ddr sdram cc: ddr400 (200mhz @ cl=3, trcd=3, trp=3) b3: ddr333 (166mhz @ cl=2.5, trcd=3, trp=3) *1 a2: ddr266 (133mhz @ cl=2 , trcd=3, trp=3) b0: ddr266 (133mhz @ cl=2.5, trcd=3, trp=3) note 1: "b3" has compatibility with "a2" and "b0" ddr2 sdram cc: ddr2-400 (200mhz @ cl=3, trcd=3, trp=3) d5: ddr2-533 (266mhz @ cl=4, trcd=4, trp=4) e6: ddr2-667 (333mhz @ cl=5, trcd=5, trp=5) f7: ddr2-800 (400mhz @ cl=6, trcd=6, trp=6) e7: ddr2-800 (400mhz @ cl=5, trcd=5, trp=5) ddr3 sdram f7: ddr3-800 (400mhz @ cl=6, trcd=6, trp=6) f8: ddr3-1066 (533mhz @ cl=7, trcd=7, trp=7) g8: ddr3-1066 (533mhz @ cl=8, trcd=8, trp=8) h9: ddr3-1333 (667mhz @ cl=9, trcd=9, trp=9) k0: ddr3-1600 (800mhz @ cl=11, trcd=11, trp=11) graphics memory 18: 1.8ns (550mhz) 04: 0.4ns (2500mhz) 20: 2.0ns (500mhz) 05: 0.5ns (2000mhz) 22: 2.2ns (450mhz) 5c: 0.56ns (1800mhz) 25: 2.5ns (400mhz) 06: 0.62ns (1600mhz) 2c: 2.66ns (375mhz) 6a: 0.66ns (1500mhz) 2a: 2.86ns (350mhz) 07: 0.71ns (1400mhz) 33: 3.3ns (300mhz) 7a: 0.77ns (1300mhz) 36: 3.6ns (275mhz) 08: 0.8ns (1200mhz) 40: 4.0ns (250mhz) 09: 0.9ns (1100mhz) 45: 4.5ns (222mhz) 1 : 1.0ns (1000mhz) 50/5a: 5.0ns (200mhz) 1 : 1.1ns (900mhz) 55: 5.5ns (183mhz) 12: 1.25ns (800mhz) 60: 6.0ns (166mhz) 14: 1.4ns (700mhz) 16: 1.6ns (600mhz) sdram (default cl=3) 50: 5.0ns (200mhz cl=3) 60: 6.0ns (166mhz cl=3) 67: 6.7ns 75: 7.5ns pc133 (133mhz cl=3) xdr dram a2: 2.4gbps, 36ns, 16cycles b3: 3.2gbps, 35ns, 20cycles c3: 3.2gbps, 35ns, 24cycles c4: 4.0gbps, 28ns, 24cycles ds: daisychain sample mobile-sdram 60: 166mhz, cl 3 75: 133mhz, cl 3 80: 125mhz, cl 3 1h: 105mhz, cl 2 1l: 105mhz, cl 3 15: 66mhz, cl 2 & 3 mobile-ddr c3: 133mhz, cl 3 c2: 100mhz, cl 3 c0: 66mhz, cl 3 note: all of lead-free or halogen-free product are in compliance with rohs component dram ordering information 1 2 3 4 5 6 7 8 9 10 11 k 4 t xx xx x x x x x xx samsung memory dram dram type density bit organization speed temp & power package type revision interface (vdd, vddq) number of internal banks dram ordering information www.samsung.com/semi/dram dram 14 january 2009 www.samsung.com/semi/dram 1. memory module: m 2. dimm type 3: dimm 4: sodimm 3. data bits 12: x72 184pin low profile registered dimm 63: x63 pc100 / pc133 sodimm with spd for 144pin 64: x64 pc100 / pc133 sodimm with spd for 144pin (intel/jedec) 66: x64 unbuffered dimm with spd for 144pin/168pin (intel/jedec) 68: x64 184pin unbuffered dimm 70: x64 200pin unbuffered sodimm 71: x64 204pin unbuffered sodimm 74: x72 /ecc unbuffered dimm with spd for 168pin (intel/jedec) 77: x72 /ecc pll + register dimm with spd for 168pin (intel pc100) 78: x64 240pin unbuffered dimm 81: x72 184pin ecc unbuffered dimm 83: x72 184pin registered dimm 90: x72 /ecc pll + register dimm 91: x72 240pin ecc unbuffered dimm 92: x72 240pin vlp registered dimm 93: x72 240pin registered dimm 95: x72 240pin fully buffered dimm with spd for 168pin (jedec pc133) 4. dram component type b: ddr3 sdram (1.5v vdd) l: ddr sdram (2.5v vdd) s: sdram t: ddr2 sdram (1.8v vdd) 5. depth 09: 8m (for 128mb/512mb) 17: 16m (for 128mb/512mb) 16: 16m 28: 128m 29: 128m (for 128mb/512mb) 32: 32m 33: 32m (for 128mb/512mb) 51: 512m 52: 512m (for 512mb/2gb) 56: 256m 57: 256m (for 512mb/2gb) 59: 256m (for 128mb/512mb) 64: 64m 65: 64m (for 128mb/512mb) 1g: 1g 1k: 1g (for 2gb) 6. # of banks in comp. & interface 1: 4k/64mxref., 4banks & sstl-2 2 : 8k/ 64ms ref., 4banks & sstl-2 2: 4k/ 64ms ref., 4banks & lvttl (sdr only) 5: 8k/ 64ms ref., 4banks & lvttl (sdr only) 5: 4banks & sstl-1.8v 6: 8banks & sstl-1.8v 7. bit organization 0: x 4 3: x 8 4: x16 6: x 4 stack (jedec standard) 7: x 8 stack (jedec standard) 8: x 4 stack 9: x 8 stack 8. component revision a: 2nd gen. b: 3rd gen. c: 4th gen. d: 5th gen. e: 6th gen. f: 7th gen. g: 8th gen. m: 1st gen. q: 17th gen. 9. package e: fbga qdp (lead-free & halogen-free) g: fbga h: fbga (lead-free & halogen-free) j: fbga ddp (lead-free) m: fbga ddp (lead-free & halogen-free) n: stsop q: fbga qdp (lead-free) t: tsop ii (400mil) u: tsop ii (lead-free) v: stsop ii (lead-free) z: fbga(lead-free) 10. pcb revision 0: mother pcb 1: 1st rev 2: 2nd rev. 3: 3rd rev. 4: 4th rev. a: parity dimm s: reduced pcb u: low profile dimm 11. temp & power c: commercial temp. (0c ~ 95c) & normal power l: commercial temp. (0c ~ 95c) & low power 12. speed cc: (200mhz @ cl=3, trcd=3, trp=3) d5: (266mhz @ cl=4, trcd=4, trp=4) e6: (333mhz @ cl=5, trcd=5, trp=5) f7: (400mhz @ cl=6, trcd=6, trp=6) e7: (400mhz @ cl=5, trcd=5, trp=5) f8: (533mhz @ cl=7, trcd=7, trp=7) g8: (533mhz @ cl=8, trcd=8, trp=8) h9: (667mhz @ cl=9, trcd=9, trp=9) k0: (800mhz @ cl=10, trcd=10, trp=10) 7a: (133mhz cl=3/pc100 cl2) 13. amb vendor for fbdimm 0, 5: intel 1, 6, 8: idt 9: montage note: all of lead-free or halogen-free product are in compliance with rohs module dram ordering i nformation 1 2 3 4 5 6 7 8 9 10 11 12 13 m x xx t xx x x x x x x xx x samsung memory dimm data bits dram component type depth number of banks bit organization amb vendor speed temp & power pcb revision package component revision dram ordering information 15 january 2009 www.samsung.com/semi/fash mlc nand flash mlc nand flash family density technology part number package type org. vol(v) moq remarks tray t/r -xxxx0xx -xxx0txx 16gb based 4kbyte/page cache 128gb dsp 51nm k9mdg08u5m-pcb0 tsop1 x8 3.3 960 1,000 k9mdg08u5m-zcb0 welp x8 3.3 960 1,000 64gb qdp k9hcg08u1m-pcb0 tsop1 x8 3.3 960 1,000 k9hcg08u1m-iib0 ulga x8 3.3 960 1,000 32gb ddp k9lbg08u0m-pcb0 tsop1 x8 3.3 960 1,000 k9lbg08u1m-iib0 ulga x8 3.3 720 2,000 2ce 16gb mono k9gag08u0m-pcb0 tsop1 x8 3.3 960 1,000 k9gag08u0m-iib0 ulga x8 3.3 720 2,000 8gb based 2kbyte/page w/o cache 32gb qdp 59nm k9hbg08u1b-pcb0 tsop1 x8 3.3 960 1,000 16gb ddp 51nm k9lag08u0a-pcb0 tsop1 x8 3.3 960 1,000 qualify b-die part # k9lag08u0b- pcb0000 59nm k9lag08u0b-pcb0 tsop1 x8 3.3 960 1,000 8gb mono 51nm k9g8g08u0a-pcb0 tsop1 x8 3.3 960 1,000 qualify b-die, part # k9g8g08u0b- pcb0000 k9g8g08u0a-iib0 ulga x8 3.3 960 2,000 59nm k9g8g08u0b-pcb0 tsop1 x8 3.3 960 1,000 4gb based 4gb mono 63nm k9g4g08u0a-pcb0 tsop1 x8 3.3 960 1,000 qualify b-die, part # k9g4g08u0b- pcb0000 51nm k9g4g08u0b-pcb0 tsop1 x8 3.3 960 1,000 please contact your local s amsung sales representative for latest product offerings. note: all parts are lead free flash 16 january 2009 www.samsung.com/semi/fash slc nand flash slc nand flash family density tech part number package type org. vol(v) moq remarks tray t/r -xxxx0xx -xxx0txx 8gb based 4kb/page 64gb dsp 51nm k9ncg08u5m-pcb0 tsop1 x8 3.3 960 1,000 32gb qdp k9wbg08u1m-pcb0 tsop1 x8 3.3 960 1,000 k9wbg08u1m-pib0 tsop1 x8 3.3 960 1,000 16gb ddp k9kag08u0m-pcb0 tsop1 x8 3.3 960 1,000 k9kag08u0m-pib0 tsop1 x8 3.3 960 1,000 8g mono k9f8g08u0m-pcb0 tsop1 x8 3.3 960 1,000 k9f8g08u0m-pib0 tsop1 x8 3.3 960 1,000 4gb based 2kb/page 16gb qdp 63nm k9wag08u1a-pcb0 tsop1 x8 3.3 960 1,000 qualify 59nm b-die: k9wag08u1b-pcb0000; a-die eol:ltbo due dec'08 k9wag08u1a-pib0 tsop1 x8 3.3 960 1,000 qualify 59nm b-die: k9wag08u1b-pib0000; a-die eol: ltbo due dec'08 k9wag08u1a-iib0 ulga x8 3.3 960 2,000 a-die eol: ltbo due dec'08 59nm k9wag08u1b-pcb0 tsop1 x8 3.3 960 1,000 k9wag08u1b-pib0 tsop1 x8 3.3 960 1,000 k9wag08u1b-kib0 ulga hf & lf x8 3.3 960 2,000 8gb ddp 63nm k9k8g08u0a-pcb0 tsop1 x8 3.3 960 1,000 qualify 59nm b-die: k9k8g08u0b-pcb0000; a-die eol: ltbo due dec'08 k9k8g08u0a-pib0 tsop1 x8 3.3 960 1,000 qualify 59nm b-die: k9k8g08u0b-pib0000; a-die eol: ltbo due dec'08 k9k8g08u1a-iib0 ulga x8 3.3 960 2,000 a-die eol/ltbo due dec'08 59nm k9k8g08u0b-pcb0 tsop1 x8 3.3 960 1,000 k9k8g08u0b-pib0 tsop1 x8 3.3 960 1,000 k9k8g08u1b-kib0 ulga hf & lf x8 3.3 960 2,000 4gb 63nm k9f4g08u0a-pcb0 tsop1 x8 3.3 960 1,000 qualify 59nm b-die: k9f4g08u0b-pcb0000; a-die eol: ltbo due dec'08 k9f4g08u0a-pib0 tsop1 x8 3.3 960 1,000 qualify 59nm b-die: k9f4g08u0b-pib0000; a-die eol: ltbo due dec'08 k9f4g08u0a-iib0 ulga x8 3.3 960 2,000 a-die eol: ltbo due dec'08 59nm k9f4g08u0b-pcb0 tsop1 x8 3.3 960 1,000 k9f4g08u0b-pib0 tsop1 x8 3.3 960 1,000 k9f4g08u0b-kib0 ulga hf & lf x8 3.3 960 2,000 2gb 2gb 63nm k9f2g08u0a-pcb0 tsop1 x8 3.3 960 1,000 qualify 59nm b-die: k9f2g08u0b-pcb0000; a-die eol: ltbo due dec'08 k9f2g08u0a-pib0 tsop1 x8 3.3 960 1,000 qualify 59nm b-die: k9f2g08u0b-pib0000; a-die eol: ltbo due dec'08 59nm k9f2g08u0b-pcb0 tsop1 x8 3.3 960 1,000 k9f2g08u0b-pib0 tsop1 x8 3.3 960 1,000 1gb 1gb 63nm k9f1g08u0b-pcb0 tsop1 x8 3.3 960 1,000 59nm c-die coming oct'08: k9f1g08u0c- pcb0000; b-die eol: ltbo due mar'09 k9f1g08u0b-pib0 tsop1 x8 3.3 960 1,000 59nm c-die coming oct'08: k9f1g08u0c- pib0000; b-die eol: ltbo due mar'09 k9f1g08r0b-jib0 63 fbga(9.5x12) x8 1.8 1,120 2,000 1.8v b-die supported through 2009 59nm k9f1g08u0c-pcb0 tsop1 x8 3.3 960 1,000 k9f1g08u0c-pib0 tsop1 x8 3.3 960 1,000 512mb 512mb 63nm k9f1208u0c-pcb0 tsop1 x8 3.3 960 1,000 k9f1208u0c-pib0 tsop1 x8 3.3 960 1,000 k9f1208r0c-jib0 63 fbga(8.5x13) x8 1.8 1,120 2,000 k9f1208u0c-jib0 63 fbga(8.5x13) x8 3.3 1,120 2,000 256mb 256mb 90nm k9f5608u0d-pcb0 tsop1 x8 3.3 960 1,000 k9f5608u0d-pib0 tsop1 x8 3.3 1,000 1,000 k9f5608r0d-jib0 63 fbga(9x11) x8 1.8 1,280 2,000 k9f5608u0d-jib0 63 fbga(9x11) 3.3 1,280 2,000 please contact your local s amsung sales representative for latest product offerings. note: all parts are lead free 17 january 2009 solid state drives (ssd)* application interface size connector den. comp. part number pc/notebook sata ii slc 3.0gb/sec ps410 1.8" thin usata 32gb 8gb mcbqe32g8mpp-0va00 64gb mccoe64g8mpp-0va00 2.5" thin sata 32gb 8gb mcbqe32g5mpp-0va00 64gb mccoe64g5mpp-0va00 slim (caseless) usata 32gb 8gb mcbqe32gfmpp-mva00 64gb mcbqe64gfmpp-mva00 sata ii mlc 3.0gb/sec pm410 1.8" thin usata 64gb 16gb mmcre64g8mpp-0va00 128gb mmcqe28g8mup-0va00 2.5" thin sata 64gb 16gb mmcre64g5mpp-0va00 128gb mmdoe28g5mpp-0va00 slim (caseless) usata 64gb 16gb mmcre64gfmpp-mva00 128gb mmcqe28gfmpp-mva00 pm800 2.5" thin sata 64gb 16gb mmcre64g5mxp-0vb00 128gb mmcre28g5mxp-0vb00 256gb mmdoe56g5mxp-0vb00 slim (caseless) usata 64gb 16gb mmcre64gfmxp-mvb00 128gb mmcre28gfmxp-mvb00 server/storage sata ii 3.0gb/sec slc ss410 2.5" thin sata 25gb 8gb mcbqe25g5mpq-0va03 50gb mccoe50g5mpq-0va03 ss415 2.5" thin sata 50gb 8gb mcbqe32g5mpq-0va03 64gb mccoe64g5mpq-0va03 ss800 2.5" thin sata 50gb 8gb mcbqe50g5mxp-0vb03 100gb mccoe00g5mxp-0vb03 umpc/low-cost pc sata ii mlc um410 half slim thin sata 8gb 16gb mmage08gsmpp-mva00 16gb mmbre16gsmpp-mva00 32gb mmcre32gsmpp-mva00 *please contact marketing for the latest offerings. www.samsung.com/semi/fash ssd flash 18 january 2009 www.samsung.com/semi/fash flash cards sd and microsd flash cards flash cards type density component controller manuf. site part number moq family ver. sd 1gb 8gb mlc b-die skymedi sts mm8gf01gwbca-2ma00 135 2gb 16g mlc m-die skymedi sts mmagf02gwmca-2na00 4gb skymedi sts mmagf04gwmca-2na00 8gb skymedi sts mmagf08gwmca-2na00 microsd (without adapter) 512mb 4gb mlc a-die smi sts mm4gr512uaca-2pa00 600 smi atp mm4gr512uacu-2pa00 smi spil mm4gr512uacy-2pa00 1gb 8gb mlc b-die skymedi spil mm8gr01gubcy-2ma00 skymedi sts mm8gr01gubca-2ma00 2gb 8gb mlc b-die skymedi spil mm8gr02gubcy-2ma00 skymedi sts mm8gr02gubca-2ma00 16g mlc m-die skymedi sts mmagr02gudca-2ma00 4gb 8gb mlc b-die skymedi spil mm8gr04gubcy-2ma00 16g mlc m-die skymedi sts mmagr04gudca-2ma00 8gb 16g mlc m-die skymedi sts mmagr08gudca-2ma00 please contact your local s amsung sales representative for latest product offerings. note: all parts are lead free. 19 january 2009 1. memory (k) 2. nand flash : 9 3. small classification (s lc : s ingle level cell, mlc : multi level cell) 7 : slc movinand 8 : mlc movinand f : slc normal g : mlc normal h : mlc qdp k : slc ddp l : mlc ddp m : mlc dsp n : slc dsp p : mlc 8 die stack q : slc 8 die stack s : slc single sm t : slc single (s/b) u : 2 stack msp w : slc 4 die stack 4~5. density 12 : 512m 56 : 256m 1g : 1g 2g : 2g 4g : 4g 8g : 8g ag : 16g bg : 32g cg : 64g dg : 128g eg : 256g lg : 24g ng : 96g zg : 48g 00 : none 6~7. organization 00 : none 08 : x8 16 : x16 8. vcc a : 1.65v~3.6v b : 2.7v (2.5v~2.9v) c : 5.0v (4.5v~5.5v) d : 2.65v (2.4v~2.9v) e : 2.3v~3.6v r : 1.8v (1.65v~1.95v) q : 1.8v (1.7v~1.95v) t : 2.4v~3.0v u : 2.7v~3.6v v : 3.3v (3.0v~3.6v) w : 2.7v~5.5v, 3.0v~5.5v 0 : none 9. mode 0 : normal 1 : dual nce & dual r/nb 3 : tri /ce & tri r/b 4 : quad nce & single r/nb 5 : quad nce & quad r/nb 9 : 1st block otp a : mask option 1 l : low grade 10. generation m : 1st generation a : 2nd generation b : 3rd generation c : 4th generation d : 5th generation 11. ---- 12. package a : cob b : fbga (halogen-free, lead-free) c : chip biz d : 63-tbga f : wsop (lead-free) g : fbga h : tbga (lead-free) i : ulga (lead-free) (12*17) j : fbga (lead-free) l : ulga (lead-free) (14*18) m : tlga n : tlga2 p : tsop1 (lead-free) q : tsop2 (lead-free) s : tsop1 (halogen-free, lead-free) t : tsop2 u : cob (mmc) v : wsop w : wafer y : tsop1 z : welp (lead-free) 13. temp c : commercial i : industrial 0 : none (containing wafer, chip, biz, exception handling code) 14. customer bad block b : include bad block d : daisychain sample l : 1~5 bad block n : ini. 0 blk, add. 10 blk s : all good block 0 : none (containing wafer, chip, biz, exception handling code) 15. pre-program version 0 : none serial (1~9, a~z) flash product ordering i nformation 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 k 9 x x x x x x x x - x x x x samsung memory nand flash small classication density density organization organization vcc pre-program version customer bad block temp package --- generation mode flash ordering information flash www.samsung.com/semi/fash 20 january 2009 www.samsung.com/semi/sram asycnhronous sram high-speed asynchronous sram density organization part number # pins-package vcc (v) speed (ns) operaring temp operating current (ma) operating current (ma) production status 4mb 256kx16 k6r4016c1d 44-soj, 44-tsop2 5 10 i 65, 55 20, 5 mass production k6r4016v1d 44-soj, 44-tsop2 3.3 10 i 80, 65 20, 5 (1.2) mass production 1mx4 k6r4004c1d 32-soj 5 10, 12 i 65, 55 20, 5 eol k6r4004v1d 32-soj 3.3 8, 10 i 80, 65 20, 5 eol 512kx8 k6r4008c1d 36-soj, 44-tsop2 5 10 i 65, 55 20, 5 mass production k6r4008v1d 36-soj, 44-tsop2 3.3 10 i 80, 65 20, 5 mass production low power asynchronous sram type density organization part number # pins-package vcc (v) speed (ns) temp current (ma) current (ua) production status utram 64mb 4mx16 k1s6416bce 48-fbga 1.8 70 i 40 180 2q'09 4mx16 k1s64161ce 48-fbga 3.0 70 i 40 180 2q'09 4mx16 k1b6416b2e 54-fbga 1.8 104mhz i 40 180 2q'09 utram2 64mb 4mx16 k1c6416b2e 54-fbga 1.8 104mhz i 40 180 2q'09 4mx16 k1c6416b8e 54-fbga 1.8 104mhz i 40 180 2q'09 utram 32mb 2mx16 k1s3216bcf 48-fbga 1.8 70 i 35 120 3q'09 2mx16 k1s32161cf 48-fbga 3.0 70 i 35 100 3q'09 2mx16 k1b3216b2f 54-fbga 1.8 104mhz i 35 100 3q'09 utram2 32mb 2mx16 k1c3216b2f 54-fbga 1.8 104mhz i 35 100 3q'09 2mx16 k1c3216b8f 54-fbga 1.8 104mhz i 35 100 3q'09 utram 16mb 1mx16 k1s1616b1c 48-fbga 1.8 70 i 35 80 3q'09 1mx16 k1s161611c 48-fbga 3.0 70 i 35 95 3q'09 utram2 16mb 1mx16 k1c1616b2c 54-fbga 1.8 104mhz i 35 100 3q'09 1mx16 k1c1616b8c 54-fbga 1.8 104mhz i 35 100 3q'09 21 january 2009 www.samsung.com/semi/sram synchronous sram synchronous pipelined b urst and f low -th ru density organization part number # pins- package operating mode vdd (v) access time tcd (ns) speed tcyc (mhz) i/o voltage (v) production status comments 36mb 2mx18 k7a321830c 100-tqfp spb 3.3, 2.5 3.1 200 3.3, 2.5 mass production 2e1d k7b321835c 100-tqfp sb 3.3, 2.5 7.5 118 3.3, 2.5 mass production ind temp only 1mx36 k7a323630c 100-tqfp spb 3.3, 2.5 3.1 200 3.3, 2.5 mass production 2e1d k7b323635c 100-tqfp sb 3.3, 2.5 7.5 118 3.3, 2.5 mass production ind temp only 18mb 512kx36 k7a163630b 100-tqfp spb 3.3, 2.5 2.6, 3.5 250, 167 3.3, 2.5 mass production 2e1d k7a163631b 100-tqfp spb 3.3, 2.5 3.1 200 3.3, 2.5 mass production 2e2d k7b163635b 100-tqfp sb 3.3, 2.5 7.5 117 3.3, 2.5 mass production 1mx18 k7a161830b 100-tqfp spb 3.3, 2.5 2.6, 3.5 250, 167 3.3, 2.5 mass production 2e1d k7a161831b 100-tqfp spb 3.3, 2.5 3.1 200 3.3, 2.5 mass production 2e2d k7b161835b 100-tqfp sb 3.3, 2.5 7.5 117 3.3, 2.5 mass production 8mb 256x36 k7a803609b 100-tqfp spb 3.3 2.6 250 3.3,2.5 not for new designs 2e1d k7a803600b 100-tqfp spb 3.3 3.5 167 3.3,2.5 not for new designs 2e1d k7b803625b 100-tqfp sb 3.3 6.5 133 3.3,2.5 not for new designs 512x18 k7a801809b 100-tqfp spb 3.3 2.6 250 3.3,2.5 not for new designs 2e1d k7a801800b 100-tqfp spb 3.3 3.5 167 3.3,2.5 not for new designs 2e1d k7b801825b 100-tqfp sb 3.3 6.5 133 3.3,2.5 not for new designs 4mb 128kx32 k7a403609b 100-tqfp spb 3.3 2.4 250 3.3, 2.5 not for new designs 2e1d k7a403600b 100-tqfp spb 3.3 3.5 167 3.3, 2.5 not for new designs 2e1d k7b403625b 100-tqfp sb 3.3 6.5 133 3.3, 2.5 not for new designs k7a403200b 100-tqfp spb 3.3 3.5 167 3.3, 2.5 not for new designs 2e1d 256kx18 k7a401809b 100-tqfp spb 3.3 2.4 250 3.3, 2.5 not for new designs 2e1d k7a401800b 100-tqfp spb 3.3 3.5 167 3.3, 2.5 not for new designs 2e1d k7b401825b 100-tqfp sb 3.3 6.5 133 3.3, 2.5 not for new designs n otes: all t qfp products are lead free 2e1d = 2-cycle enable and 1-cycle disable 2e2d = 2-cycle enable and 2-cycle disable s pb speed recommendations: for 200mhz use 250mhz; for 133mhz use 167mhz s b speed recommendation: use 7.5ns access t ime use 6.5ns access t ime sram 22 january 2009 www.samsung.com/semi/sram synchronous sram late-write rr and r-l type density organization part number # pins- package operating mode vdd (v) access time tcd (ns) speed tcyc (mhz) i/o voltage (v) production status late- write r-r 32mb 1mx36 k7p323674c 119-bga sp 1.8 / 2.5v 1.6, 2.0 300,250 1.5 (max 1.8) c/s 2mx18 k7p321874c 119-bga sp 1.8 / 2.5v 1.6, 2.0 300,250 1.5 (max 1.8) c/s 8mb 256kx36 k7p803611b 119-bga sp 3.3 1.6 300 1.5 (max.2.0) not for new designs 512kx18 k7p801811b 119-bga sp 3.3 1.6 300 1.5 (max.2.0) not for new designs 256kx36 k7p803666b 119-bga sp 2.5 2.0 250 1.5 (max.2.0) not for new designs 512kx18 k7p801866b 119-bga sp 2.5 2.0 250 1.5 (max.2.0) not for new designs late- write r-r and r-l 4mb 128kx36 k7p403622b 119-bga sp 3.3 2.5,2.7,3.0 250,200,167 2.5/3.3 not for new designs 256kx18 k7p401822b 119-bga sp 3.3 2.5,2.7,3.0 250,200,167 2.5/3.3 not for new designs 256kx18 k7p401823b 119-bga sp 3.3 6.5 167 2.5/3.3 not for new designs ntram density organization part number # pins- package operating mode vdd (v) access time tcd (ns) speed tcyc (mhz) i/o voltage (v) production status 72mb 2mx36 k7n643645m 100-tqfp, 165fbga spb 2.5 2.6, 3.5 250, 167 2.5 mass production 4mx18 k7n641845m 100-tqfp, 165fbga spb 2.5 2.6, 3.5 250, 167 2.5 mass production 36mb 1mx36 k7n323635c 100-tqfp, 165fbga spb 3.3, 2.5 2.6, 3.5 250, 167 3.3, 2.5 mass production 2mx18 k7n321835c 100-tqfp, 165fbga spb 3.3, 2.5 2.6, 3.5 250, 167 3.3, 2.5 mass production 1mx36 k7m323631c 100-tqfp ft 3.3, 2.5 7.5 118 3.3, 2.5 mass production 2mx18 k7m321831c 100-tqfp ft 3.3, 2.5 7.5 118 3.3, 2.5 mass production 18mb 1mx18 k7n161831b 100-tqfp, 165fbga spb 3.3, 2.5 2.6, 3.5 250, 167 3.3, 2.5 mass production 512kx36 k7n163631b 100-tqfp, 165fbga spb 3.3, 2.5 2.6, 3.5 250, 167 3.3, 2.5 mass production 1mx18 k7m161835b 100-tqfp ft (sb) 3.3 6.5 133 3.3, 2.5 mass production 512kx36 k7m163635b 100-tqfp ft (sb) 3.3 6.5 133 3.3, 2.5 mass production 8mb 256kx36 k7n803601b 100-tqfp spb 3.3 3.5 167 3.3,2.5 not for new designs 512kx18 k7n801801b 100-tqfp spb 3.3 3.5 167 3.3,2.5 not for new designs 256kx36 k7n803609b 100-tqfp spb 3.3 2.6 250 3.3,2.5 not for new designs 512kx18 k7n801809b 100-tqfp spb 3.3 2.6 250 3.3,2.5 not for new designs 256kx36 k7n803645b 100-tqfp spb 2.5 3.5 167 2.5 not for new designs 512kx18 k7n801845b 100-tqfp spb 2.5 3.5 167 2.5 not for new designs 256kx36 k7n803649b 100-tqfp spb 2.5 2.6 250 2.5 not for new designs 512kx18 k7n801849b 100-tqfp spb 2.5 2.6 250 2.5 not for new designs 512kx18 k7m801825b 100-tqfp ft 3.3 6.5 133 3.3, 2.5 not for new designs 256kx36 k7m803625b 100-tqfp ft 3.3 6.5 133 3.3, 2.5 not for new designs 4mb 128kx36 k7n403609b 100-tqfp spb 3.3 3.0 200 3.3,2.5 not for new designs 256kx18 k7n401809b 100-tqfp spb 3.3 3.0 200 3.3,2.5 not for new designs n otes: all t qfp products are lead free ntram speed recommendations: for 200mhz use 250mhz; for 133mhz use 167mhz ntram speed recommendation: use 7.5ns access t ime use 6.5ns access t ime recommended spb speeds are 250mhz and 167mhz recommended s b acess speed is 7.5ns 23 january 2009 ddr synchronous sram type density organization part number # pins- package vdd (v) access time tcd (ns) cycle time (mhz) i/o voltage (v) production status comments ddr 16mb 512k x36 k7d163674b 153-bga 1.8~2.5 2.3 330, 300 1.5~1.9 mass production 1m x18 k7d161874b 153-bga 1.8~2.5 2.3 330, 300 1.5~1.9 mass production 8mb 256k x36 k7d803671b 153-bga 2.5 1.7/1.9/2.1 333, 330, 250 1.5(max 2.0) not for new designs 512k x18 k7d801871b 153-bga 2.5 1.7/1.9/2.1 333, 330, 250 1.5(max 2.0) not for new designs ddr ii cio/ sio 72mb 4m x18 k7i641882m 165-fbga 1.8 0.45,0.45,0.45,0.50 300,250,200,167 1.5,1.8 mass production cio-2b k7i641884m 165-fbga 1.8 0.45,0.45,0.45,0.50 300,250,200,167 1.5,1.8 mass production cio-4b k7j641882m 165-fbga 1.8 0.45,0.45,0.45,0.50 300,250,200,167 1.5,1.8 mass production sio-2b 2m x36 k7i643682m 165-fbga 1.8 0.45,0.45,0.45,0.50 300,250,200,167 1.5,1.8 mass production cio-2b k7i643684m 165-fbga 1.8 0.45,0.45,0.45,0.50 300,250,200,167 1.5,1.8 mass production cio-4b k7j643682m 165-fbga 1.8 0.45,0.45,0.45,0.50 300,250,200,167 1.5,1.8 mass production sio-2b 36mb 2m x18 k7i321882c 165-fbga 1.8 0.45 333,300,250 1.5,1.8 mass production cio-2b k7i321884c 165-fbga 1.8 0.45 333,300,250 1.5,1.8 mass production cio-4b k7j321882c 165-fbga 1.8 0.45 333,300,250 1.5,1.8 mass production sio-2b 1m x36 k7i323682c 165-fbga 1.8 0.45 333,300,250 1.5,1.8 mass production cio-2b k7i323684c 165-fbga 1.8 0.45 333,300,250 1.5,1.8 mass production cio-4b k7j323682c 165-fbga 1.8 0.45 333,300,250 1.5,1.8 mass production sio-2b 18mb 1m x18 k7i161882b 165-fbga 1.8 0.45,0.45,0.45,0.50 300,250,200,167 1.5,1.8 mass production cio-2b k7i161884b 165-fbga 1.8 0.45,0.45,0.45,0.50 300,250,200,167 1.5,1.8 mass production cio-4b k7j161882b 165-fbga 1.8 0.45,0.45,0.45,0.50 300,250,200,167 1.5,1.8 mass production sio-2b 512k x36 k7j163682b 165-fbga 1.8 0.45,0.45,0.45,0.50 300,250,200,167 1.5,1.8 mass production sio-2b k7i163682b 165-fbga 1.8 0.45,0.45,0.45,0.50 300,250,200,167 1.5,1.8 mass production cio-2b k7i163684b 165-fbga 1.8 0.45,0.45,0.45,0.50 300,250,200,167 1.5,1.8 mass production cio-4b ddr ii+ cio 36mb 2m x18 k7k3218t2c 165-fbga 1.8 0.45 450, 400, 333 1.5 mass production ddrii + cio-2b 1m x36 k7k3236t2c 165-fbga 1.8 0.45 450, 400, 333 1.5 mass production ddrii + cio-2b 18mb 1m x18 k7k1618t2c 165-fbga 1.8 0.45 450, 400, 333 1.5 mass production ddrii + cio-2b 512k x36 k7k1636t2c 165-fbga 1.8 0.45 450, 400, 333 1.5 mass production ddrii + cio-2b n otes: 2b = burst of 2 4b = burst of 4 sio = separate i/o cio = common i/o for ddr ii ci o/sio : c-die use 330, 300, or 250mhz instad of 200mhz or 167mhz using a stable dll circuit for ddr ii+ ci o : 2-clock latency is available. a 2.5-clock latency can be supported on 18mb at 500mhz and 36mb at 450mhz www.samsung.com/semi/sram ddr i / ii / ii+ sram 24 january 2009 www.samsung.com/semi/sram qdr i / ii / ii+ qdr synchronous sram type density organization part number # pins- package vdd (v) access time tcd (ns) cycle time (mhz) i/o voltage (v) production status comments qdr ii 72mb 8m x9 k7r640982m 165-fbga 1.8 0.45,0.45,0.50 250,200,167 1.5,1.8 mass production qdr ii-2b 4m x18 k7r641882m 165-fbga 1.8 0.45,0.45,0.50 250,200,167 1.5,1.8 mass production qdr ii-2b k7r641884m 165-fbga 1.8 0.45,0.45,0.45,0.50 300,250,200,167 1.5,1.8 mass production qdr ii-4b 2m x36 k7r643682m 165-fbga 1.8 0.45,0.45,0.50 250,200,167 1.5,1.8 mass production qdr ii-2b k7r643684m 165-fbga 1.8 0.45,0.45,0.45,0.50 300,250,200,167 1.5,1.8 mass production qdr ii-4b 36mb 4m x9 k7r320982c 165-fbga 1.8 0.45 300, 250, 200 1.5,1.8 mass production qdr ii-2b 2m x18 k7r321882c 165-fbga 1.8 0.45 300, 250, 200 1.5,1.8 mass production qdr ii-2b k7r321884c 165-fbga 1.8 0.45 333, 300, 250 1.5,1.8 mass production qdr ii-4b 1m x36 k7r323682c 165-fbga 1.8 0.45 300, 250, 200 1.5,1.8 mass production qdr ii-2b k7r323684c 165-fbga 1.8 0.45 333, 300, 250 1.5,1.8 mass production qdr ii-4b qdr i, qdr ii 18mb 2m x9 k7r160982b 165-fbga 1.8 0.45,0.45,0.50 250,200,167 1.5,1.8 mass production qdr ii - 2b 1m x18 k7r161882b 165-fbga 1.8 0.45,0.45,0.50 250,200,167 1.5,1.8 mass production qdr ii - 2b k7r161884b 165-fbga 1.8 0.45,0.45,0.45,0.50 300,250,200,167 1.5,1.8 mass production qdr ii - 4b k7q161862b 165-fbga 1.8v / 2.5v 2.5 167 1.5,1.8 mass production qdr i - 2b k7q161864b 165-fbga 1.8v / 2.5v 2.5 167 1.5,1.8 mass production qdr i - 4b 512k x36 k7r163682b 165-fbga 1.8 0.45,0.45,0.50 250,200,167 1.5,1.8 mass production qdr ii - 2b k7r163684b 165-fbga 1.8 0.45,0.45,0.45,0.50 300,250,200,167 1.5,1.8 mass production qdr ii - 4b k7q163662b 165-fbga 1.8v / 2.5v 2.5 167 1.5,1.8 mass production qdr i - 2b k7q163664b 165-fbga 1.8v / 2.5v 2.5 167 1.5,1.8 mass production qdr i - 4b qdr ii+ 36mb 1m x36 k7s3218t4c 165-fbga 1.8 0.45 450, 400, 333 1.5 mass production qdr ii + 4b 2m x18 k7s3236t4c 165-fbga 1.8 0.45 450, 400, 333 1.5 mass production qdr ii + 4b 18mb 1m x18 k7s1618t4c 165-fbga 1.8 0.45 450, 400, 333 1.5 mass production qdr ii + 4b 512k x36 k7s1636t4c 165-fbga 1.8 0.45 450, 400, 333 1.5 mass production qdr ii + 4b n otes: for qdr i, qdr ii: 2b = burst of 2, 4b = burst of 4 for qdr ii (36mb): c-die use 300, 250mhz or 200mhz instead of 167mhz using a stable dll circuit for qdr ii (72mb): 2b = burst of 2 and 250mhz or 200mhz is recommended, 4b = burst of 4 and 300mhz or 250mhz is recommended for qdr ii+: 2-clock latency supported. 2.5-clock latency can be supported with 450mhz speed 25 january 2009 synchronous sram ordering information 1. memory (k) 2. sync sram: 7 3. small classification a: sync pipelined burst b: sync burst d: double data rate i: double data rate ii, common i/o j: double data rate, separate i/o k: double data ii+, common i/o m: sync burst + ntram n: sync pipelined burst + ntram p: sync pipe q: quad data rate i r: quad data rate ii s: quad data rate ii+ 4~5. density 80: 8m 16: 18m 40: 4m 32: 36m 64: 72m 6~7. organization 08: x8 09: x9 18: x18 32: x32 36: x36 8~9. vcc, interface, mode 00: 3.3v,lvttl,2e1d wide 01: 3.3v,lvttl,2e2d wide 08: 3.3v,lvttl,2e2d hi speed 09: 3.3v,lvttl,hi speed 11: 3.3v,hstl,r-r 12: 3.3v,hstl,r-l 14: 3.3v,hstl,r-r fixed zq 22: 3.3v,lvttl,r-r 23: 3.3v,lvttl,r-l 25: 3.3v,lvttl,sb-ft wide 30: 1.8/2.5/3.3v,lvttl,2e1d 31: 1.8/2.5/3.3v,lvttl,2e2d 35: 1.8/2.5/3.3v,lvttl,sb-ft 44: 2.5v,lvttl,2e1d 45: 2.5v,lvttl,2e2d 49: 2.5v,lvttl,hi speed 52: 2.5v,1.5/1.8v,hstl,burst2 54: 2.5v,1.5/1.8v,hstl,burst4 62: 2.5v/1.8v,hstl,burst2 64: 2.5v/1.8v,hstl,burst4 66: 2.5v,hstl,r-r 74: 1.8v,2.5v,hstl,all 82: 1.8v,hstl,burst2 84: 1.8v,hstl,burst4 88: 1.8v,hstl,r-r t2: 1.8v,2clock latency,burst2 t4: 1.8v,2clock latency,burst4 u2: 1.8v,2.5clock latency,burst2 u4: 1.8v,2.5clock latency,burst4 10. generation m: 1st generation a: 2nd generation b: 3rd generation c: 4th generation d: 5th generation 11. -- 12. package h: bga,fcbga,pbga g: bga, fcbga, fbga (lf) f: fbga e: fbga (lf) q: (l)qpf p: (l)qfp(lf) c: chip biz w: wafer 13. temp, power common (temp,power) 0: none,none (containing of error handling code) c: commercial,normal e: extended,normal i: industrial,normal wafer, c hip biz level division 0: none,none 1: hot dc sort 2: hot dc, selected ac sort 14~15. speed sync burst,sync burst + ntram < mode is r-l > (clock accesss time) 65: 6.5ns 70: 7ns 75: 7.5ns 80: 8ns 85: 8.5ns other small classification (clock cycle time) 10: 100mhz 11: 117mhz 13: 133mhz 14: 138mhz 16: 166mhz 20: 200mhz 25: 250mhz 26: 250mhz(1.75ns) 27: 275mhz 30: 300mhz 33: 333mhz 35: 350mhz 37: 375mhz 40: 400mhz(t-cycle) 42: 425mhz 45: 450mhz 50: 500mhz (except sync pipe) 16. packing type (16 digit) - common to all products, except of mask rom - divided into tape & reel (in mask rom, divided into tray, ammo packing separately) type packing type new marking component tape & reel t other (tray, tube, jar) 0 (number) stack s component tray y (mask rom) ammo packing a module module tape & reel p module other packing m synchronous sram ordering i nformation 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 k 7 x x x x x x x x - x x x x x samsung memory sync sram small classifcation density density organization organization vcc, interface, mode packaging type speed speed temp, power package --- generation vcc, interface, mode www.samsung.com/semi/sram sram 26 january 2009 www.samsung.com/semi/mcp mcp mcp: nand/dram nand density dram density/organization voltage (nand-dram) mcp package pop package 512mb 256mb (x16,x32) 2.7v/1.8v - 1.8v 107/137fbga 120fbga 512mb (x16,x32) 2.7v/1.8v - 1.8v 107/137fbga 120/136fbga 1gb 256mb (x16,x32) *3.0v/1.8v - 1.8v 107/137fbga 152fbga 512mb (x16,x32) *2.7v/1.8v - 1.8v 107/137fbga 119/152fbga 1gb (x32) 1.8v - 1.8v 137fbga 2gb 512mb (x16,x32) 1.8v - 1.8v 107/137fbga 119/152fbga 1gb (x16,x32) 1.8v - 1.8v 107/137fbga 152/160/168fbga 4gb 1gb (x32) 2.7v - 1.8v 137fbga 137fbga mcp: onenand/dram onenand density dram density/organization voltage (nand-dram) mcp package pop package 512mb 256mb (x32) 3.3v/1.8v - 1.8v 188fbga 152fbga 512mb (x16,x32) 1.8v - 1.8v 167/202fbga 152fbga 768mb (x32) 1.8v - 1.8v - 152fbga 1gb 512mb (x16,x32) 1.8v - 1.8v 167/202fbga 168fbga 1gb (x32) 1.8v - 1.8v - 168fbga 2gb 512mb (x16,x32) 1.8v - 1.8v - 152/160/168fbga 1gb (x16,x32) 1.8v - 1.8v 167/202fbga 152/160/168fbga 2gb (x32) 1.8v - 1.8v 152/168fbga 4gb 1gb (x16) 1.8v - 1.8v 202fbga - mcp: flexonenand/dram (flex)onenand density dram density/organization voltage (nand-dram) mcp package pop package 8gb 2gb (x32) 1.8v - 1.8v 202fbga mcp: onenand/dram/onedram (flex)onenand density dram density/organization voltage (nand-dram) mcp package pop package 2gb 1gb (x16) 1.8v - 1.8v 216fbga 27 january 2009 www.samsung.com/semi/mcp mcp mcp: movinand/nand/dram onenand density dram density/organization voltage (movinand/nand-dram) mcp package 1gb & 1gb 1gb (x32) 3.3v/1.8v - 1.8v 199fbga 1gb & 2gb 1gb (x32) 3.3v/1.8v - 1.8v 199fbga 2gb (x32) 2.8v/1.8v - 1.8v 199fbga 2gb & 2gb 1gb (x32) 3.3v/1.8v - 1.8v 199fbga 2gb (x32) 3.3v/1.8v - 1.8v 199fbga 4gb & 2gb 1gb (x32) 3.3v/1.8v - 1.8v 199fbga 2gb (x32) 3.3v/1.8v - 1.8v 199fbga 8gb & 2gb 1gb (x32) 3.3v/1.8v - 1.8v 199fbga 2gb (x32) 3.3v/1.8v - 1.8v 199fbga mcp: nor/utram nor density utram or dram density/ organization voltage (nor-dram) package 512mb 128mb 1.8v - 1.8v 107fbga 256mb 128mb 1.8v - 1.8v 107fbga 3.0v - 3.0v 84fbga 64mb 3.0v - 3.0v 84fbga 1.8v - 1.8v 56fbga 128mb 64mb 1.8v - 1.8v 84/88fbga 32mb 1.8v - 1.8v 84/88fbga 3.0v - 3.0v 64fbga 64mb 32mb 3.0v - 3.0v 56fbga mcp: nor/dram nor density utram or dram density/ organization voltage (nor-dram) package 512mb 128mb (x16) 1.8v - 1.8v 103fbga 256mb (x16) 1.8v - 1.8v 103fbga mcp: onedram/onenand/nand onedram onenand/nand version part no. pkg information org vcc speed opr. org vcc speed type size type a-port : x32 b-port : x32 1.8v 166mhz@cl=3 a-port : sdr b-port : ddr x16 1.8v 83mhz mux aqd kac00f008m-ae77000 14*14*1.15 240fbga a-port : x16 b-port : x32 1.8v 166mhz@cl=3 a-port : ddr b-port : ddr x16 1.8v 83mhz mux aqd kac00f00xm-ae77000 14*14*1.15 240fbga a-port : x16 b-port : x32 1.8v 166mhz@cl=3 a-port : sdr b-port : ddr x16 1.8v 83mhz mux aqd tbd 14*14*1.15 240fbga a-port : x32 b-port : x32 1.8v a-port : sdr b-port : ddr x16 1.8v 83mhz mux aaqd kbz00900pm-a439000 14*14*1.25 240fbga * onedram 512mb now eol * based on demand, o nedram is in mcp only, not in discrete package m c p 28 january 2009 www.samsung.com/semi/fusion fusion memory onedram o nedram is a dual-port, low-power dram with an s ram buffer interface and is optimal for high-performance, high-density mobile applications. density part number package org. voltage (v) temp. speed moq (tray) remarks 512mb kja51z23pc-aao 216fbga (14x14) a-port:x16(sdr/ddr) b-port:x16(sdr/ddr) 1.8v extended 133mhz pkg combination: 2g onenand + 512mb mddr + 512mb onedram mcp p/n: kac00f00jm kja51y23pc-aao 152fbga (14x14) a-port:x16(sdr/ddr) b-port:x16(sdr/ddr) 1.8v extended 133mhz pkg combination: 2g nand + 512mb mddr + 512mb onedram mcp p/n: kar00900gm onenand onenand is a monolothic ic that combines a nand flash array with a no r flash interface plus an s ram buffer. its ideal for high-performance, high-density applications. density part number package org. voltage (v) temp. speed moq (tray) remarks 512mb kfg1216q2b-deb8000 63fbga (9.5x12) x16 1.8 extended 83mhz 1,120 kfg1216u2b-dib6000 63fbga (9.5x12) x16 3.3 industrial 66mhz 1,120 kfg1216q2b-seb8000 67fbga (7x9) x16 1.8 extended 83mhz 1,120 kfg1216u2b-sib6000 67fbga (7x9) x16 3.3 industrial 66mhz 1,120 kfm1216q2b-deb8000 63 fbga (9.5x12) x16 1.8v extended 83mhz 1,120 muxed 1gb kfg1g16u2c-aib6000 63 fbga (10x13) x16 3.3v industrial 66mhz 1,120 kfg1g16q2c-aeb8000 63 fbga (10x13) x16 1.8v extended 83mhz 1,120 kfm1g16q2c-deb8000 63 fbga (10x13) x16 1.8v extended 83mhz 1,120 muxed 2gb kfg2g16q2a-deb8000 63 fbga (10x13) x16 1.8v extended 83mhz 1,120 kfm2g16q2a-deb8000 63 fbga (10x13) x16 1.8v extended 83mhz 1,120 muxed 4gb ddp kfh4g16q2a-deb8000 63 fbga (10x13) x16 1.8v extended 83mhz 1,120 *t&r moq 2kpcs **please contact your local samsung sales representative for latest product offerings & information on support & availability. n ote : all parts are lead free flex-onenand a monolithic ic with a nand flash array using a no r flash interface, flex-onenand enables partitioning into s lc and mlc areas so the chip can be configured for storage or high-speed access. density part number package org. voltage (v) temp. speed moq (tray) remarks 4gb flex-onenand kfg4gh6q4m-deb8000 63 fbga (10x13) x16 1.8v extended 83mhz 1,120 fsr software required kfg4gh6u4m-dib6000 63 fbga (10x13) x16 3.3v industrial 66mhz 1,120 fsr software required kfm4gh6q4m-deb8000 63 fbga (10x13) x16 1.8v extended 83mhz 1,120 muxed. fsr sw req. 8gb ddp flex-onenand kfh8gh6u4m-dib6000 63 fbga (10x13) x16 3.3v industrial 66mhz 1,120 fsr software required *t&r moq 2kpcs **please contact your local samsung sales representative for latest product offerings & information on support & availability. n ote : all parts are lead free movinand combining high-density mlc nand flash with an mmc controller in a single chip that has an mmc interface, movinand delivers dense, cost-effective storage for embedded applications. movinand densities vol(v) package package size org. 1gb 1.8/3.3 fbga 12.0x18x1.2t x8 2gb 1.8/3.3 fbga 12.0x18x1.2t x8 4gb 1.8/3.3 fbga 12.0x18x1.2t x8 8gb 1.8/3.3 fbga 12.0x18x1.3t x8 16gb 1.8/3.3 fbga 14.0x18.0 x8 please contact your local s amsung sales representative for latest product offerings. n ote : all parts are lead free 29 january 2009 3.5" h ard disk drives family capacity (gb) rpm interface buffer model f1 1tb 7200 sata-2 32mb hd103uj 750 7200 sata-2 32mb hd753lj 750 7200 sata-2 16mb hd752lj 640 7200 sata-2 16mb hd642jj 500 7200 sata-2 16mb hd502ij 500 7200 sata-2 8mb hd501ij 320 7200 sata-2 16mb hd322hj 250 7200 sata-2 16mb hd252hj 250 7200 sata-2 8mb hd251hj 160 7200 sata-2 16mb hd162gj 160 7200 sata-2 8mb hd161gj t166s 500 7200 sata-2 8 hd500lj 500 7200 sata-2 16 hd501lj 320 7200 sata-2 8 hd320kj 320 7200 sata-2 16 hd321kj t133s 400 7200 sata-2 8 hd400li 400 7200 sata-2 16 hd401li 300 7200 sata-2 8 hd300li t133 400 7200 pata 8 hd400ld 300 7200 pata 8 hd300ld s250 250 7200 sata-2 8 hd250hj s166s 160 7200 sata-2 8 hd161hj 120 7200 sata-2 8 hd120hj 80 7200 sata-2 2 hd081gj 80 7200 sata-2 8 hd082gj 40 7200 sata-2 2 hd041gj 40 7200 sata-2 8 hd042gj p120s 250 7200 sata-2 8 sp2504c 250 7200 sata-2 8 sp2004c p120 250 7200 pata 8 sp2514n 200 7200 pata 8 sp2014n p80sd 160 7200 sata-2 8 hd160jj 120 7200 sata-2 8 hd120ij 80 7200 sata-2 8 hd080hj p80sd 160 7200 pata 2 sp1644n 160 7200 pata 8 sp1654n 120 7200 pata 2 sp1243n 120 7200 pata 8 sp1253n 80 7200 pata 2 sp0842n 3.5" enterprise raid drives family capacity (gb) rpm interface buffer model f1r 1tb 7200 sata-2 32 he103uj 750 7200 sata-2 32 he753lj 500 7200 sata-2 16 he502ij 320 7200 sata-2 16 he322hj 250 7200 sata-2 16 he252hj www.samsung.com/hdd hard disk drives storage 30 january 2009 2.5 h ard disk drives family capacity (gb) rpm interface buffer model m6 320 5400 sata 8 hm320ji 250 5400 sata 8 hm251ji m5s 250 5400 sata 8 hm250ji 160 5400 sata 8 hm160hi 120 5400 sata 8 hm121hi 80 5400 sata 8 hm080gi 60 5400 sata 8 hm061gi m5p 160 5400 pata 8 hm160hc 120 5400 pata 8 hm121hc 80 5400 pata 8 hm080gc m80s 160 5400 sata 8 hm160ji 120 5400 sata 8 hm120ii 80 5400 sata 8 hm080hi m80 160 5400 pata 8 hm160jc 120 5400 pata 8 hm120ic 80 5400 pata 8 hm080hc m60s 120 5400 sata 8 hm120ji 100 5400 sata 8 hm100ji 60 5400 sata 8 hm060hi m60 120 5400 pata 8 hm120jc 100 5400 pata 8 hm100jc 60 5400 pata 8 hm060hc 1.8 h ard disk drives family capacity (gb) rpm interface buffer model n1 (3600rpm) 60 3600 pata 2 hs061ha ceata 2 hs061hp 40 pata 2 hs041ha ceata 2 hs041hp 30 pata 2 hs031ga ceata 2 hs031gp 20 pata 2 hs021ga ceata 2 hs021gp n1 (4200rpm) 60 4200 pata 2 hs060hb ceata 2 hs060hq 40 pata 2 hs040hb ceata 2 hs040hq 30 pata 2 hs030gb ceata 2 hs030gq 20 pata 2 hs020gb ceata 2 hs020gq external h ard disk drives family size capacity (gb) model # interface operating system dimensions s1 mini 1.8" 120 hxsu012ba usb 2.0 windows 2000 pro/vista/xp; mac os x 10.4.8 or later 15x87x62mm s2 portable 2.5" 160 hxsu016ba usb 2.0 windows 2000 pro/vista/xp; mac os x 10.4.8 or later 17x111x82mm 160 hxmu016da 250 hxmu025da 320 hxmu032da 400 hxmu040da 500 hxmu050da www.samsung.com/hdd hard disk drives 31 january 2009 sh -s222l optical storage disk f ormat general s pecifications 1. disc type - re ad: mastered dis c, cd-r, cd-rw, dvd-ro m, dvd-r 3.95gb, dvd-r 4.7gb authoring, dvd-r 4.7gb general, dvd-rw 4.7gb, dvd+r 4.7gb, dvd+r 8.5gb(double-layer), dvd+rw 4.7gb, dvd-ram 4.7gb/2.6gb - write : dvd 4.7gb(dvdr, dvdrw, dvd-ram), double layerr, cd-r, cd-rw - print: cd-r, dvd+/-r l s media 2. data format: - cd: cd-da, cd-r o m, mixe d-cd, cd-ro m xa, enhance d-cd, cd-ext ra/cd+, photo-cd, video -cd, cd-text , cd-g, multi-session - dvd: dvd-ram, dvd-r o m, dvd-video , multi- s ession(read/write), multi-border(read) 3. recording: - cd-r/rw: da o , t a o , sa o , packet write(rw) - dvd+r/rw: s equential, random(rw) - dvd-r/rw: incremental, da o , restricted overwrite(rw) - dvd-ram: random data transfer rate max media type write read dvd+r 22x (29.7 mb/sec) 16x (21.6mb/sec) dvd+rw 8x (10.8mb/sec) 12x (16.2mb/sec) dvd+r dual 16x (21.6mb/sec) 12x (16.2mb/sec) dvd-r dual 12x (16.2mb/sec) 12x (16.2mb/sec) dvd-r 22x (29.7 mb/sec) 16x (21.6mb/sec) dvd-rw 6x (8.1mb/sec) 12x (16.2mb/sec) dvd-rom (single) - 16x (21.6mb/sec) dvd-rom (dual) - 12x (16.2mb/sec) cd-rom - 48x (7.2mb/sec) cd-r 48x (7.2mb/sec) 40x (6.0mb/sec) us-rw 32x (4.8mb/sec) 40x (6.0mb/sec) hs-rw 10x (1.5mb/sec) 40x (6.0mb/sec) cd-rw 4x (0.6mb/sec) 40x (6.0mb/sec) dvd-ram 12x (16.2mb/sec) 12x (16.2mb/sec) data transfer mode ultra dma mode 2: 33.3mb/sec, multiword dma mode2: 16.6mb/sec, pio mode 4: 16.7mb/sec interface ata/atapi (e-ide) buffer memory 2m drive install form horizontal / vertical size (w * h * l) 148.2mm (w) x 42mm (h) x 170mm (d) with bezel buffer protection yes lead free yes light scribe yes sh -s222a optical storage disk f ormat general s pecifications 1. disc type - re ad: mastered dis c, cd-r, cd-rw, dvd-ro m, dvd-r 3.95gb, dvd-r 4.7gb authoring, dvd-r 4.7gb general, dvd-rw 4.7gb, dvd+r 4.7gb, dvd+r 8.5gb(double-layer), dvd+rw 4.7gb, dvd-ram 4.7gb/2.6gb - write : dvd 4.7gb(dvdr, dvdrw, dvd-ram), double layerr, cd-r, cd-rw 2. data format: - cd: cd-da, cd-r o m, mixe d-cd, cd-ro m xa, enhance d-cd, cd-ext ra/cd+, photo-cd, video -cd, cd-text , cd-g, multi-session - dvd: dvd-ram, dvd-r o m, dvd-video , multi- s ession (read/write), multi-border(read) 3. recording: - cd-r/rw: da o , t a o , sa o , packet write(rw) - dvd+r/rw: s equential, random(rw) - dvd-r/rw: incremental, da o , restricted overwrite(rw) - dvd-ram: random data transfer rate max media type write read dvd+r 22x (29.7 mb/sec) 16x (21.6mb/sec) dvd+rw 8x (10.8mb/sec) 12x (16.2mb/sec) dvd+r dual 16x (21.6mb/sec) 12x (16.2mb/sec) dvd-r dual 12x (16.2mb/sec) 12x (16.2mb/sec) dvd-r 22x (29.7 mb/sec) 16x (21.6mb/sec) dvd-rw 6x (8.1mb/sec) 12x (16.2mb/sec) dvd-rom (single) - 16x (21.6mb/sec) dvd-rom (dual) - 12x (16.2mb/sec) cd-rom - 48x (7.2mb/sec) cd-r 48x (7.2mb/sec) 40x (6.0mb/sec) us-rw 32x (4.8mb/sec) 40x (6.0mb/sec) hs-rw 10x (1.5mb/sec) 40x (6.0mb/sec) cd-rw 4x (5.4mb/sec) 40x (6.0mb/sec) dvd-ram 12x (16.2mb/sec) 12x (16.2mb/sec) data transfer mode ultra dma mode 2: 33.3mb/sec, multiword dma mode2: 16.6mb/sec, pio mode 4: 16.7mb/sec interface ata/atapi (e-ide) buffer memory 2m drive install form horizontal / vertical size (w * h * l) 148.2mm (w) x 42mm (h) x 170mm (d) with bezel buffer protection yes lead free yes light scribe no www.samsungodd.com optical disk drives storage 32 january 2009 sh -s223q optical storage disk f ormat general s pecifications 1. disc support - re ad: mastered dis c, cd-r, cd-rw, dvd-ro m, dvd-r 3.95gb, dvd-r 4.7gb authoring, dvd-r 4.7gb general, dvd-rw 4.7gb, dvd-rw 8.5 gb(double-layer), dvd+r 4.7gb, dvd+r 8.5gb(double-layer), dvd+rw 4.7gb, dvd-ram 4.7gb/2.6gb - write : dvd 4.7gb(dvdr, dvdrw, dvd-ram), double layerr, double layer-rw, cd-r, cd-rw - print: dvd+/-r ( lf media [label/data side] / non lf media [data side] ) - (optional) 2. data format: - cd: cd-da, cd-r o m, mixe d-cd, cd-ro m xa, enhance d-cd, cd-ext ra/cd+, photo-cd, video -cd, cd-text , cd-g, multi-session - dvd: dvd-ram, dvd-r o m, dvd-video , multi- s ession(read/write), multi-border(read) data transfer rate max media type write read dvd+r 22x(29.7 mb/sec) 16x (21.6mb/sec) dvd+rw 8x (10.8mb/sec) 12x (16.2mb/sec) dvd+r dual 16x (21.6mb/sec) 12x (16.2mb/sec) dvd-r dual 12x (16.2mb/sec) 12x (16.2mb/sec) dvd-r 22x(29.7 mb/sec) 16x (21.6mb/sec) dvd-rw 6x (8.1mb/sec) 12x (16.2mb/sec) dvd-rom (single) - 16x (21.6mb/sec) dvd-rom (dual) - 12x (16.2mb/sec) cd-rom - 48x (7.2mb/sec) cd-r 48x (7.2mb/sec) 40x (6.0mb/sec) us-rw 32x (4.8mb/sec) 40x (6.0mb/sec) hs-rw 10x (1.5mb/sec) 40x (6.0mb/sec) cd-rw 4x (0.6mb/sec) 40x (6.0mb/sec) dvd-ram 12x (16.2mb/sec) 12x (16.2mb/sec) access time cd 110ms (random), dvd 130ms (random) data transfer mode sata 1.5gbps interface serial-ata buffer memory 2m drive install form horizontal / vertical size (w * h * l) 148.2mm (w) x 170mm (d) x 42mm (h) with bezel buffer protection applied lead free applied light scribe applied sh -s223f optical storage disk f ormat general s pecifications 1. disc support - re ad: mastered dis c, cd-r, cd-rw, dvd-ro m, dvd-r 3.95gb, dvd-r 4.7gb authoring, dvd-r 4.7gb general, dvd-rw 4.7gb, dvd-rw 8.5 gb(double-layer), dvd+r 4.7gb, dvd+r 8.5gb(double-layer), dvd+rw 4.7gb, dvd-ram 4.7gb/2.6gb - write : dvd 4.7gb(dvdr, dvdrw, dvd-ram), double layerr, double layer-rw, cd-r, cd-rw - print: dvd+/-r ( lf media [label/data side] / non lf media [data side] ) - (optional) 2. data format: - cd: cd-da, cd-r o m, mixe d-cd, cd-ro m xa, enhance d-cd, cd-ext ra/cd+, photo-cd, video -cd, cd-text , cd-g, multi-session - dvd: dvd-ram, dvd-r o m, dvd-video , multi- s ession(read/write), multi-border(read) data transfer rate max media type write read dvd+r 22x(29.7 mb/sec) 16x (21.6mb/sec) dvd+rw 8x (10.8mb/sec) 12x (16.2mb/sec) dvd+r dual 16x (21.6mb/sec) 12x (16.2mb/sec) dvd-r dual 12x (16.2mb/sec) 12x (16.2mb/sec) dvd-r 22x(29.7 mb/sec) 16x (21.6mb/sec) dvd-rw 6x (8.1mb/sec) 12x (16.2mb/sec) dvd-rom (single) - 16x (21.6mb/sec) dvd-rom (dual) - 12x (16.2mb/sec) cd-rom - 48x (7.2mb/sec) cd-r 48x (7.2mb/sec) 40x (6.0mb/sec) us-rw 32x (4.8mb/sec) 40x (6.0mb/sec) hs-rw 10x (1.5mb/sec) 40x (6.0mb/sec) cd-rw 4x (0.6mb/sec) 40x (6.0mb/sec) dvd-ram 12x (16.2mb/sec) 12x (16.2mb/sec) access time cd 110ms (random), dvd 130ms (random) data transfer mode sata 1.5gbps interface serial-ata buffer memory 2m drive install form horizontal / vertical size (w * h * l) 148.2mm (w) x 42mm (h) x 170mm (d) with bezel buffer protection yes lead free yes light scribe no www.samsungodd.com optical disk drives 33 january 2009 sn-t083a [slot-in type] optical storage disk f ormat general s pecifications - re ad: mastered dis c, cd-r, cd-rw, dvd-ro m, dvd-r 3.95gb, dvd-r 4.7gb authoring, dvd-r 4.7gb general, dvd-rw, dvd+r 4.7gb, dvd+r 8.5gb(double-layer), dvd+rw 4.7gb, dvd-ram 4.7gb - write : dvd 4.7gb(dvdr, dvdrw, dvd-ram), double layerr,cd-r, cd-rw data transfer rate max media type write read dvd+r 8x (10.8mb/sec) 8x (10.8mb/sec) dvd+rw 8x (10.8mb/sec) 8x (10.8mb/sec) dvd+r dual 6x (8.1mb/sec) 6x (8.1mb/sec) dvd-r dual 6x (8.1mb/sec) 6x (8.1mb/sec) dvd-r 6x (8.1mb/sec) 8x (10.8mb/sec) dvd-rw 6x (8.1mb/sec) 8x (10.8mb/sec) dvd-rom (single) - 8x (10.8mb/sec) dvd-rom (dual) - 8x (10.8mb/sec) cd-rom - 24x (3.6mb/sec) cd-r 24x (3.6mb/sec) 24x (3.6mb/sec) us-rw 24x (3.6mb/sec) 24x (3.6mb/sec) hs-rw 10x (1.5mb/sec) 24x (3.6mb/sec) cd-rw 4x (0.6mb/sec) 24x (3.6mb/sec) dvd-ram 5x (6.75mb/sec) 5x (6.75mb/sec) data transfer mode ultra dma mode 2: 33.3mb/sec, multiword dma mode2: 16.6mb/sec, pio mode 4: 16.7mb/sec interface serial-ata buffer memory 2m drive install form horizontal size (w * h * l) 128 (w) x 12.7 (h) x 127 (d) without bezel buffer protection yes lead free yes light scribe no sn-s083b optical storage disk f ormat general s pecifications 1. disc type - re ad: mastered dis c, cd-r, cd-rw, dvd-ro m, dvd+r 4.7gb, dvd+r dl 8.5gb, dvd+rw 4.7gb, dvd-r 3.95gb, dvd-r 4.7gb authoring, dvd-r 4.7gb general, dvd-r dl 8.5gb, dvd-rw, dvd-ram 4.7gb - write : dvd4.7gb(dvdr/rw, dvd-ram), dvdr dl(8.5gb), cd-r/rw 2. data format: - cd: cd-da, cd-r o m, mixe d-cd, cd-ro m xa, enhance d-cd, cd-ext ra/cd+, photo-cd, video -cd, cd-text , cd-g, multi-session - dvd: dvd-ram, dvd-r o m, dvd-video , multi- s ession(read/write), multi-border(read/write) 3. recording mode - cd-r/rw: da o , t a o , sa o , packet write(rw) - dvd+r/rw: s equential, random(rw) - dvd-r/rw: incremental, da o , restricted overwrite(rw) - dvd-ram: random data transfer rate max media type write read dvd+r 8x (10.8mb/sec) 8x (10.8mb/sec) dvd+rw 8x (10.8mb/sec) 8x (10.8mb/sec) dvd+r dual 6x (8.1mb/sec) 6x (8.1mb/sec) dvd-r dual 6x (8.1mb/sec) 6x (8.1mb/sec) dvd-r 8x (10.8mb/sec) 8x (10.8mb/sec) dvd-rw 6x (8.1mb/sec) 8x (10.8mb/sec) dvd-rom (single) - 8x (10.8mb/sec) dvd-rom (dual) - 8x (10.8mb/sec) cd-rom - 24x (3.6mb/sec) cd-r 24x (3.6mb/sec) 24x (3.6mb/sec) us-rw 24x (3.6mb/sec) 24x (3.6mb/sec) hs-rw 10x (1.5mb/sec) 24x (3.6mb/sec) cd-rw 4x (0.6mb/sec) 24x (3.6mb/sec) dvd-ram 5x (6.75mb/sec) 5x (6.75mb/sec) access time cd 150ms (random), dvd 160ms (random) data transfer mode ultra dma mode 2: 33.3mb/sec, multiword dma mode2: 16.6mb/sec, pio mode 4: 16.7mb/sec interface serial-ata buffer memory 2m drive install form horizontal / vertical size (w * h * l) 128 (w) x 12.7 (h) x 127 (d) without bezel buffer protection yes lead free yes light scribe no www.samsungodd.com optical disk drives storage 34 january 2009 sn-s083m optical storage disk f ormat general s pecifications 1. disc type - re ad: mastered dis c, cd-r, cd-rw, dvd-ro m, dvd+r 4.7gb, dvd+r dl 8.5gb, dvd+rw 4.7gb, dvd-r 3.95gb, dvd-r 4.7gb authoring, dvd-r 4.7gb general, dvd-r dl 8.5gb, dvd-rw, dvd-ram 4.7gb - write : dvd4.7gb(dvdr/rw, dvd-ram), dvdr dl(8.5gb), cd-r/rw 2. data format: - cd: cd-da, cd-r o m, mixe d-cd, cd-ro m xa, enhance d-cd, cd-ext ra/cd+, photo-cd, video -cd, cd-text , cd-g, multi-session - dvd: dvd-ram, dvd-r o m, dvd-video , multi- s ession(read/write), multi-border(read/write) 3. recording mode - cd-r/rw: da o , t a o , sa o , packet write(rw) - dvd+r/rw: s equential, random(rw) - dvd-r/rw: incremental, da o , restricted overwrite(rw) - dvd-ram: random data transfer rate max media type write read dvd+r 8x (10.8mb/sec) 8x (10.8mb/sec) dvd+rw 8x (10.8mb/sec) 8x (10.8mb/sec) dvd+r dual 6x (8.1mb/sec) 6x (8.1mb/sec) dvd-r dual 6x (8.1mb/sec) 6x (8.1mb/sec) dvd-r 8x (10.8mb/sec) 8x (10.8mb/sec) dvd-rw 6x (8.1mb/sec) 8x (10.8mb/sec) dvd-rom (single) - 8x (10.8mb/sec) dvd-rom (dual) - 8x (10.8mb/sec) cd-rom - 24x (3.6mb/sec) cd-r 24x (3.6mb/sec) 24x (3.6mb/sec) us-rw 24x (3.6mb/sec) 24x (3.6mb/sec) hs-rw 10x (1.5mb/sec) 24x (3.6mb/sec) cd-rw 4x (0.6mb/sec) 24x (3.6mb/sec) dvd-ram 5x (6.75mb/sec) 5x (6.75mb/sec) access time cd 150ms (random), dvd 160ms (random) data transfer mode ultra dma mode 2: 33.3mb/sec, multiword dma mode2: 16.6mb/sec, pio mode 4: 16.7mb/sec interface serial-ata buffer memory 2m drive install form horizontal / vertical size (w * h * l) 128 (w) x 12.7 (h) x 127 (d) without bezel buffer protection yes lead free yes light scribe yes sn-s082h optical storage disk f ormat general s pecifications - cd: cd-da, cd-r o m, mixe d-cd, cd-ro m xa, enhance d-cd, cd-ext ra/cd+, photo-cd, video -cd, cd-text , cd-g, multi-session - dvd: dvd-ram, dvd-r o m, dvd-video , multi- s ession(read/write), multi-border(read/write) data transfer rate max media type write read dvd+r 8x (10.8mb/sec) 8x (10.8mb/sec) dvd+rw 8x (10.8mb/sec) 8x (10.8mb/sec) dvd+r dual 6x (8.1mb/sec) 8x (10.8mb/sec) dvd-r dual 6x (8.1mb/sec) 8x (10.8mb/sec) dvd-r 8x (10.8mb/sec) 8x (10.8mb/sec) dvd-rw 6x (8.1mb/sec) 8x (10.8mb/sec) dvd-rom (single) - 8x (10.8mb/sec) dvd-rom (dual) - 8x (10.8mb/sec) cd-rom - 24x (3.6mb/sec) cd-r 24x (3.6mb/sec) 24x (3.6mb/sec) us-rw 24x (3.6mb/sec) 24x (3.6mb/sec) hs-rw 10x (1.5mb/sec) 24x (3.6mb/sec) cd-rw 4x (0.6mb/sec) 24x (3.6mb/sec) dvd-ram 5x (6.75mb/sec) 5x (6.75mb/sec) data transfer mode ultra dma mode 2: 33.3mb/sec, multiword dma mode2: 16.6mb/sec, pio mode 4: 16.7mb/sec interface ata/atapi(e-ide) buffer memory 2m drive install form horizontal size (w * h * l) 128 (w) x 12.7 (h) x 127 (d) without bezel buffer protection yes lead free yes light scribe no www.samsungodd.com optical disk drives 35 january 2009 sn-m242d optical storage disk f ormat general s pecifications cd-da, cd-rom, video cd, cd-i/fmv, cd-rom xa, multi-session disc, dvd-rom, dvd-video, dvdr,dvdrw, cd-r,cd-rw, dvd-ram data transfer rate max media type write read dvd+r - 8x (10.8mb/sec) dvd+rw - 8x (10.8mb/sec) dvd+r dual - 6x (8.1mb/sec) dvd-r dual - 6x (8.1mb/sec) dvd-r - 8x (10.8mb/sec) dvd-rw - 8x (10.8mb/sec) dvd-rom (single) - 8x (10.8mb/sec) dvd-rom (dual) - 6x (8.1mb/sec) cd-rom - 24x (3.6mb/sec) cd-r 24x (3.6mb/sec) 24x (3.6mb/sec) us-rw 24x (3.6mb/sec) 24x (3.6mb/sec) hs-rw 10x (1.5mb/sec) 24x (3.6mb/sec) cd-rw 4x (0.6mb/sec) 24x (3.6mb/sec) dvd-ram - 5x (6.75mb/sec) data transfer mode ultra dma mode 2: 33.3mb/sec, multiword dma mode2: 16.6mb/sec, pio mode 4: 16.7mb/sec interface ata/atapi (e-ide) buffer memory 2m drive install form horizontal / vertical size (w * h * l) 128 x 12.7 x 129.0 buffer protection yes lead free yes light scribe no [usb 2.0] se-s084b optical storage disk f ormat general s pecifications 1. disc type - read: mastered disc, cd-r, cd-rw, dvd-rom, dvd+r 4.7gb, dvd+r dl 8.5gb, dvd+rw 4.7gb, dvd-r 3.95gb, dvd-r 4.7gb authoring, dvd-r 4.7gb general, dvd-r dl 8.5gb, dvd-rw, dvd-ram 4.7gb - write: dvd4.7gb(dvdr/rw, dvd-ram), dvdr dl(8.5gb), cd-r/rw - print: cd-r, dvd+/-r light scribe media 2. data format: - cd: cd-da, cd-rom, mixed-cd, cd-rom xa, enhanced-cd, cd-extra/cd+, photo-cd, video-cd, cd-text, cd-g, multi-session - dvd: ddvd-ram, dvd-rom, dvd-video, multi-session (read/write), multi-border(read/write) 3. recording mode - cd-r/rw: dao, tao, sao, packet write(rw) - dvd+r/rw: sequential, random(rw) - dvd-r/rw: incremental, dao, restricted overwrite(rw) - dvd-ram: random data transfer rate max media type write read dvd+r 8x (10.8mb/sec) 8x (10.8mb/sec) dvd+rw 8x (10.8mb/sec) 8x (10.8mb/sec) dvd+r dual 6x (8.1mb/sec) 8x (10.8mb/sec) dvd-r dual 6x (8.1mb/sec) 8x (10.8mb/sec) dvd-r 6x (8.1mb/sec) 8x (10.8mb/sec) dvd-rw 6x (8.1mb/sec) 8x (10.8mb/sec) dvd-rom (single) - 8x (10.8mb/sec) dvd-rom (dual) - 8x (10.8mb/sec) cd-rom - 24x (3.6mb/sec) cd-r 24x (3.6mb/sec) 24x (3.6mb/sec) us-rw 24x (3.6mb/sec) 24x (3.6mb/sec) hs-rw 10x (1.5mb/sec) 24x (3.6mb/sec) cd-rw 4x (0.6mb/sec) 24x (3.6mb/sec) dvd-ram 5x (6.75mb/sec) 5x (6.75mb/sec) access time cd 130ms (random), dvd 160ms (random) interface usb 2.0 buffer memory 2m drive install form horizontal / vertical size (w * h * l) 141mm (w) x 19mm (h) x 157mm (d) buffer protection yes lead free yes light scribe no www.samsungodd.com optical disk drives storage disclaimer: the information in this publication has been carefully checked and is believed to be accurate at the time of publication. samsung assumes no responsibility, however, for possible errors or omissions, or for any consequences resulting from the use of the information contained herein. samsung reserves the right to make changes in its products or product specifcations with the intent to improve function or design at any time and without notice and is not required to update this documentation to refect such changes. this publication does not convey to a purchaser of semiconductor devices described herein any license under the patent rights of samsung or others. samsung makes no warranty, representation, or guarantee regarding the suitability of its products for any particular purpose, nor does samsung assume any liability arising out of the application or use of any product or circuit and specifcally disclaims any and all liability, including without limitation any consequential or incidental damages. copyright 2009. samsung and samsung semiconductor, inc. are registered trademarks of samsung electronics, co., ltd. all other names and brands may be claimed as the property of others. the appearance of all products, dates, fgures, diagrams and tables are subject to change at any time, without notice. br-09-all-001 printed 01/09 memory dram flash sram mcp fusion system lsi asics aps display drivers imaging ics foundry storage solid state drives hard drives optical disc drives lcd panels tv monitors notebook pc mobile samsung semiconductor, inc. 3655 north first street san jose, ca 95134-1713 www.samsung.com/semi/us |
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